Unlock instant, AI-driven research and patent intelligence for your innovation.

A coating method for large-thickness photosensitive BCBs for three-dimensional integration

A three-dimensional integrated, large-thickness technology, applied in the manufacturing of electrical components, circuits, semiconductor/solid-state devices, etc., can solve problems such as through-holes that cannot be smoothly connected, and achieve the effect of improving performance and reducing sags

Active Publication Date: 2018-07-31
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The technical problem to be solved by the present invention is to provide a coating method for three-dimensionally integrated large-thickness photosensitive BCB, which effectively solves the technical problem that the through holes of two layers of BCB cannot be smoothly connected in the traditional secondary coating

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A coating method for large-thickness photosensitive BCBs for three-dimensional integration
  • A coating method for large-thickness photosensitive BCBs for three-dimensional integration
  • A coating method for large-thickness photosensitive BCBs for three-dimensional integration

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] refer to Figure 4a , first provide a silicon substrate with a deep groove of about 110 μm, the deep groove is an etching pit with a dip angle of 54.7 by chemical wet etching, and a chip with a thickness of about 100 μm is embedded in the deep groove. Spin coat a layer of 15 μm photosensitive BCB. Because of the large depth of the deep groove and the viscosity of BCB, it is easy to seal gas in the deep groove.

[0027] refer to Figure 4b , Next, move the silicon substrate to the reflow furnace, set it into a vacuum environment, and the temperature of the reflow furnace is at room temperature, and let it stand for more than one hour to let the gas completely overflow. And the fluidity of BCB is used to obtain a relatively flat BCB layer. Then the BCB is exposed and cured, so that the first layer of BCB is completely preserved.

[0028] refer to Figure 4c , on the basis of the first layer of BCB, coat the second layer of BCB, and then photolithography, development,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for coating a large-thickness photosensitive BCB used for three-dimensional integration, comprising: first spin-coating a layer of photosensitive BCB on a wafer, and then placing it in a vacuum environment; exposing the first layer of BCB Pre-baking, exposure and curing; spin-coating the second layer of photosensitive BCB on the first layer, and performing photolithography, development and curing; dry etching to remove part of the BCB, the etching thickness is the thickness of the first layer of BCB, that is Can. The invention effectively solves the technical problem that the through holes of two layers of BCB cannot be smoothly connected in the traditional secondary coating.

Description

technical field [0001] The invention belongs to the field of three-dimensionally integrated wafer-level packaging, in particular to a method for coating a large-thickness photosensitive BCB used for three-dimensionally integrated. Background technique [0002] The wafer-level packaging process is different from the previous method of cutting chips and packaging them separately. Instead, it can be directly packaged and re-wired on the wafer, and aging and testing many chips can be performed on the wafer at the same time. This not only reduces the chip area, but also greatly increases the number of packages in a unit wafer, while greatly reducing the cost of packaging. The silicon-based embedded wafer-level packaging process is a combination of wafer-level packaging process and system-level packaging process. It has the advantages of mass production, high processing efficiency, and good compatibility with various processes. [0003] In the three-dimensional integrated wafer-l...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/56
Inventor 孙浩陈雯芳佟瑞张祁莲丁惠凤钱蓉孙晓玮
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI