Signal isolation transmission method and signal isolation transmission circuit
A technology of transmission circuit and transmission method, which is applied in the field of power converters, can solve the problems of large power loss, low transmission rate of transformers, and reduction of data transmission rate of transformers, etc., to achieve low transmission power consumption and increase data transmission rate.
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Embodiment 1
[0046] Such as image 3 As shown, a detection circuit for signal isolation transmission includes a first transistor Q1, a first resistor R, a first capacitor C, a first Schmitt trigger, a first inverter, a first power ground GND, Supply voltage VCC. The base of the first transistor Q1 is connected to the first power ground GND, the emitter of the first transistor Q1 is connected to one end of the narrow pulse signal input pin, and the collector of the first transistor Q1 is connected to the first resistor R and the first capacitor C , the input end of the first Schmitt trigger; the other end of the first resistor R is connected to the supply voltage VCC; the other end of the first capacitor C is connected to the first power ground GND; the output end of the first Schmitt trigger connected to the input terminal of the first inverter; the output terminal of the first inverter is connected to the detection signal output pin. The power supply voltages of the first Schmitt trigge...
Embodiment 2
[0059] Such as Figure 5 As shown, it is the circuit diagram of the second embodiment of the present invention: replace the first transistor Q1 with the first N-type MOS transistor Q2, the gate of the first N-type MOS transistor Q2 is connected to the first power ground GND, the first N The source of the N-type MOS transistor Q2 is connected to one end of the second wire segment, and the drain of the first N-type MOS transistor Q2 is connected to the input end of the first resistor R, the first capacitor C, and the first Schmitt trigger; The rest of the connection methods are the same as the first embodiment, and its basic working principle is similar to that of the first embodiment.
Embodiment 3
[0061] Such as Figure 6 As shown, it is the circuit diagram of the third embodiment of the present invention: replace the first resistor R with the first P-type MOS transistor Q3, the gate of the first P-type MOS transistor Q3 is connected to the first power ground GND, the first P The source of the P-type MOS transistor Q3 is connected to the power supply voltage VCC, and the drain of the first P-type MOS transistor Q3 is connected to the collector of the first transistor Q1, the first capacitor C, and the input terminal of the first Schmitt trigger; the rest The connection mode is the same as that of the first embodiment, and its basic working principle is similar to that of the first embodiment.
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