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A method of igbt module state assessment based on damage voltage

A state evaluation and voltage technology, applied in the direction of electrical digital data processing, special data processing applications, instruments, etc., can solve the problems of wasteful use of devices, failure to meet the state evaluation and life prediction of IGBT modules, etc.

Active Publication Date: 2018-07-20
CHINA THREE GORGES UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the acquisition of the S-N curve does not combine the actual process conditions of the IGBT module. It is only considered that the beginning of fatigue formation is the end of the life. Therefore, it cannot meet the requirements of state assessment and life prediction of IGBT modules

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  • A method of igbt module state assessment based on damage voltage
  • A method of igbt module state assessment based on damage voltage
  • A method of igbt module state assessment based on damage voltage

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Embodiment

[0053] Taking a common IGBT module on the market as the research object, the rated current is 300A and the rated voltage is 1200V. The module structure is composed of four identical modules. The upper and lower modules operate in parallel, and the left and right modules are connected in series. Therefore, when establishing the IGBT model, a quarter of the model is simulated. IGBT is used as a packaging module. Due to the packaging material The thermal conductivity of the filled silica gel is small, and the heat is mainly dissipated downward through the copper substrate. Therefore, ignoring the above silica gel and packaging, it is considered that the top of the module is in adiabatic condition. The invention provides a method for evaluating the state of an IGBT module based on damage voltage, the main steps of which are as follows:

[0054] 1) Electric-thermal coupling calculation: The excitation source input required for structural field calculation is obtained through elect...

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Abstract

The invention provides an IGBT module state evaluation method based on a damage voltage. The IGBT module state evaluation method comprises the following steps: executing electrothermal coupling calculation; calculating a structural field; drawing a corrected S-N curve; correcting an IGBT module model according to the corrected S-N curve, calculation results of electrothermal- structural field and a power cycle index; and executing electrothermal coupling analysis on the corrected model, calculating the damage voltages of the IGBT module under different damage degrees to obtain a damage voltage curve of the IGBT module, namely a state evaluation model of the IGBT module. According to the IGBT module state evaluation method based on the damage voltage provided by the invention, the effect of multiple working conditions on the fatigue failure of a power device is not considered, the S-N curve is corrected and is used for evaluating the damage state of the IGBT module, the defects in the prior art are overcome, and the accurate evaluation of the damage state is realized.

Description

technical field [0001] The invention relates to the fields of IGBT module state evaluation and device reliability, in particular to a damage voltage-based IGBT module state evaluation method. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) has become a representative of the modern power electronics field due to its high input impedance, simple control circuit, high current carrying density, fast switching speed, and low saturation voltage. In recent years, the wide application of insulated gate bipolar transistors has brought power electronics technology into a new era. With the application of new structures and new processes of power semiconductors, the current carrying density and voltage level of IGBT power modules are continuously increasing, and the loss is also increasing rapidly, but the volume is relatively small, so a huge heat load will be generated during operation. , thermal problems are now the main factor affecting the failure of IGBT mo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
CPCG06F30/23G06F2119/04
Inventor 张宇娇吴刚梁普子恒姜岚苏攀
Owner CHINA THREE GORGES UNIV