High Gain Vertical Cavity Surface Emitting Semiconductor Laser Suitable for High Temperature Operation

Abstract

A high-gain vertical-cavity surface-emitting semiconductor laser suitable for high-temperature operation belongs to the field of optoelectronic technology. In order to solve the problem of gain attenuation in the light-emitting area of ​​existing vertical-cavity surface-emitting semiconductor lasers during high-temperature operation, its structure is N-plane from bottom to top. Electrode, N-type substrate, N-type doped DBR, active region, gain guide layer, gain control electrode, oxide layer, P-type doped DBR, P-side cap layer, P-side electrode and light exit window; the gain The guide layer is composed of an N-side gain guide layer and a P-side gain guide layer, and is respectively located on the upper and lower sides of the active area; the gain control electrode is located on the P-side gain guide layer, and the two are electrically connected; The vertical cavity surface emitting laser with gain compensation function of the present invention has excellent gain stability in high temperature environment, simple preparation process, wide application range, and very broad application prospects in the fields of laser communication, atomic sensing and the like.

Description

technical field [0001] The invention relates to a novel vertical cavity surface-emitting semiconductor laser capable of generating high optical gain, which is suitable for high-temperature working conditions and belongs to the field of optoelectronic technology. Background technique [0002] Vertical cavity surface emitting laser is a semiconductor laser that emits light from the vertical surface. It has the advantages of small size, fast modulation, and easy monolithic integration. It has extremely important applications in the fields of medical treatment, sensing, information storage, communication, and satellite navigation. . With the expansion of application fields, application fields such as all-time communication and satellite navigation have put forward urgent demands on the high temperature resistance of devices. How to improve the threshold and power characteristics of vertical cavity surface emitting semiconductor lasers has become a research hotspot in recent year...

AI Technical Summary

Problems solved by technology

[0010] In order to solve the problem of gain attenuation in the light-emitting region of the existing vertical cavity surface emitting semiconductor laser when working at high temperature, the present invention proposes a new vertical cavity surface emitting semiconductor laser structure with a gain control function to realize vertical cavity surface emitting The light-emitting area of ​​semiconductor lasers can obtain high optical gain, especially when the gain of the light-emitting area of ​​the conventional device structure is attenuated under high temperature operation, the new structure can still ensure the stability of the gain of the light-emitting area, and effectively suppress the performance attenuation of the device caused by the temperature effect

Images