High-gain vertical cavity surface emitting semiconductor laser suitable for high-temperature operation

Abstract

The invention discloses a high-gain vertical cavity surface emitting semiconductor laser suitable for high-temperature operation, and belongs to the technical field of photoelectrons. In order to solve the problem that the gain of a light-emitting area is attenuated existing during the high-temperature operation of an existing vertical cavity surface emitting semiconductor laser, the structure of the semiconductor laser comprises an N-surface electrode, an N-type substrate, an N-type doping distributed bragg reflector (DBR), an active area, gain guiding layers, a gain regulation and control electrode, an oxide layer, a P-type doping DBR, a P-surface cover layer, a P-surface electrode and a light-emitting window from bottom to top in sequence; the gain guiding layers consist of an N-side gain guiding layer and a P-side gain guiding layer, and are respectively positioned on the upper side and the lower side of the active area; the gain regulation and control electrode is positioned on the P-side gain guiding layer, and the gain regulation and control electrode and the P-side gain guiding layer are electrically connected. The vertical cavity surface emitting laser with a gain compensation function disclosed by the invention has extremely excellent gain stability in a high-temperature environment, is simple in preparation technology and wide in application range, and has extremely wide application prospects in the fields of laser communication, atom sensing and the like.

Description

technical field [0001] The invention relates to a novel vertical cavity surface-emitting semiconductor laser capable of generating high optical gain, which is suitable for high-temperature working conditions and belongs to the field of optoelectronic technology. Background technique [0002] Vertical cavity surface emitting laser is a semiconductor laser that emits light from the vertical surface. It has the advantages of small size, fast modulation, and easy monolithic integration. It has extremely important applications in the fields of medical treatment, sensing, information storage, communication, and satellite navigation. . With the expansion of application fields, application fields such as all-time communication and satellite navigation have put forward urgent demands on the high temperature resistance of devices. How to improve the threshold and power characteristics of vertical cavity surface emitting semiconductor lasers has become a research hotspot in recent year...

AI Technical Summary

Problems solved by technology

[0010] In order to solve the problem of gain attenuation in the light-emitting region of the existing vertical cavity surface emitting semiconductor laser when working at high temperature, the present invention proposes a new vertical cavity surface emitting semiconductor laser structure with a gain control function to realize vertical cavity surface emitting The light-emitting area of ​​semiconductor lasers can obtain high optical gain, especially when the gain of the light-emitting area of ​​the conventional device structure is attenuated under high temperature operation, the new structure can still ensure the stability of the gain of the light-emitting area, and effectively suppress the performance attenuation of the device caused by the temperature effect

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