Production method for MEMS silicon film
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- CSMC TECH FAB2 CO LTD
- Publication Date
- 2016-06-08
- Estimated Expiration
- Not applicable · inactive patent
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
technical field
[0001] The invention relates to the technical field of semiconductor devices, in particular to a method for manufacturing a MEMS silicon film. Background technique
[0002] Many MEMS devices require the use of silicon membranes. For example, a piezoresistive MEMS pressure sensor is composed of a silicon membrane and a stress-sensitive piezoresistor on the silicon membrane. When the silicon membrane is deformed under pressure, the piezoresistive resistance value is changed, and the pressure change can be obtained by measuring the resistance change through a bridge. The size and thickness of the silicon film directly determine the sensitivity of the device. How to prepare a silicon film with precise size and thickness has become one of the key technologies for the development and practical application of MEMS devices, and thus a variety of silicon film preparation technologies have been developed. The simplest technique for preparing a silicon film is to dire...