Unlock instant, AI-driven research and patent intelligence for your innovation.
Method and device for processing memory pages in memory
What is Al technical title?
Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A processing method and memory page technology, applied in the storage field, can solve the problems of low cost, small capacity, low access performance, etc.
Active Publication Date: 2019-06-11
HUAWEI TECH CO LTD
View PDF5 Cites 0 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
[0003] PCM is a new generation of non-volatile memory, which uses the reversible phase transition of materials to store information, and can realize single-level cell (Single-Level Cell, SLC) storage and multi-level cell (Multi-Level Cell, MLC) Storage; SLC is characterized by high cost, small capacity, and fast speed, while MLC is characterized by large capacity, low cost, but slow speed
[0004] Based on the different characteristics of SLC and MLC, if you use SLC storage, you can get higher access performance, but the storage capacity will be limited. If you use MLC storage, you can get larger storage capacity, but the access performance is lower; using in-memory When setting SLC and MLC at the same time, you can only simply set SLC and MLC according to the preset ratio according to the requirements of access performance or storage capacity, but you cannot get better access performance and larger storage capacity. There is no effective solution that combines the advantages of SLC and MLC
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0076] In this embodiment, the memory pages in the memory include idle SLC memory pages, active SLC memory pages, inactive SLC memory pages and MLC memory pages, wherein the data in the idle SLC memory pages is empty, and the active The data stored in the SLC memory page is the data that has been accessed within the set period of time, while the data stored in the inactive SLC memory page and MLC memory page is the data that has not been accessed within the set period of time;
[0077] Here, the set time length is determined based on memory usage (including memory access frequency and memory occupancy rate), and when the memory access frequency is higher or the memory occupancy rate is higher, the set time length is set to be shorter; or , when the memory access frequency is higher and the memory usage rate is higher, the set time length is set to be shorter.
[0078]For the above-mentioned different types of memory pages, in the specific implementation, it is necessary to con...
Embodiment 2
[0091] Such as Figure 4 As shown, it is a flowchart of a method for processing memory pages according to Embodiment 2 of the present invention, including:
[0092] S401: Establish different memory page linked lists to record the active state of the memory pages: establish an idle SLC memory page linked list, an active SLC memory page linked list, an inactive SLC memory page linked list, and an MLC memory page linked list for each VM.
[0093] Here, the free SLC memory page linked list is used to store the addresses of free SLC memory pages, the active SLC memory page linked list is used to store the addresses of active memory pages, and the inactive SLC memory page linked list is used to store the addresses of inactive memory pages, The MLC memory page linked list is used to store the address of the MLC memory page, and the active state of the memory page is recorded through these memory page linked lists.
[0094] In a specific implementation, idle SLC memory pages are memo...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
PUM
Login to View More
Abstract
The invention relates to the field of storage technology, in particular to a method and device for processing memory pages in memory, so as to obtain higher access performance and larger storage capacity. In the method for processing memory pages in the memory provided by the present invention, the memory pages in the memory include idle single-layer unit SLC memory pages, active SLC memory pages, inactive SLC memory pages and multi-layer unit MLC memory pages; The processing method includes: when it is determined that the number of free single-level unit SLC memory pages of any virtual machine VM is less than the set threshold, converting one free SLC memory page into two MLC memory pages; The data in the memory page is copied to the converted two MLC memory pages; the storage space in the two inactive SLC memory pages is released to obtain two free SLC memory pages.
Description
technical field [0001] The invention relates to the field of storage technology, in particular to a method and device for processing memory pages in memory. Background technique [0002] With the development of virtualization technology, the demand for hardware resources such as memory resources is getting higher and higher. Due to the high energy consumption of traditional Dynamic Random Access Memory (DRAM) and high difficulty in capacity expansion, new types of memory with low energy consumption, large capacity and non-volatile properties, such as Phase Change Memory (PCM) , will be expected to replace traditional DRAM memory. [0003] PCM is a new generation of non-volatile memory, which uses the reversible phase transition of materials to store information, and can realize single-level cell (Single-Level Cell, SLC) storage and multi-level cell (Multi-Level Cell, MLC) Storage: SLC is characterized by high cost, small capacity, and fast speed, while MLC is characterized...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to View More 
Login to View More