Method and device for processing memory pages in memory

A processing method and memory page technology, applied in the storage field, can solve the problems of low cost, small capacity, low access performance, etc.

Active Publication Date: 2019-06-11
HUAWEI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] PCM is a new generation of non-volatile memory, which uses the reversible phase transition of materials to store information, and can realize single-level cell (Single-Level Cell, SLC) storage and multi-level cell (Multi-Level Cell, MLC) Storage; SLC is characterized by high cost, small capacity, and fast speed, while MLC is characterized by large capacity, low cost, but slow speed
[0004] Based on the different characteristics of SLC and MLC, if you use SLC storage, you can get higher access performance, but the storage capacity will be limited. If you use MLC storage, you can get larger storage capacity, but the access performance is lower; using in-memory When setting SLC and MLC at the same time, you can only simply set SLC and MLC according to the preset ratio according to the requirements of access performance or storage capacity, but you cannot get better access performance and larger storage capacity. There is no effective solution that combines the advantages of SLC and MLC

Method used

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  • Method and device for processing memory pages in memory
  • Method and device for processing memory pages in memory
  • Method and device for processing memory pages in memory

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Experimental program
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Effect test

Embodiment 1

[0076] In this embodiment, the memory pages in the memory include idle SLC memory pages, active SLC memory pages, inactive SLC memory pages and MLC memory pages, wherein the data in the idle SLC memory pages is empty, and the active The data stored in the SLC memory page is the data that has been accessed within the set period of time, while the data stored in the inactive SLC memory page and MLC memory page is the data that has not been accessed within the set period of time;

[0077] Here, the set time length is determined based on memory usage (including memory access frequency and memory occupancy rate), and when the memory access frequency is higher or the memory occupancy rate is higher, the set time length is set to be shorter; or , when the memory access frequency is higher and the memory usage rate is higher, the set time length is set to be shorter.

[0078]For the above-mentioned different types of memory pages, in the specific implementation, it is necessary to con...

Embodiment 2

[0091] Such as Figure 4 As shown, it is a flowchart of a method for processing memory pages according to Embodiment 2 of the present invention, including:

[0092] S401: Establish different memory page linked lists to record the active state of the memory pages: establish an idle SLC memory page linked list, an active SLC memory page linked list, an inactive SLC memory page linked list, and an MLC memory page linked list for each VM.

[0093] Here, the free SLC memory page linked list is used to store the addresses of free SLC memory pages, the active SLC memory page linked list is used to store the addresses of active memory pages, and the inactive SLC memory page linked list is used to store the addresses of inactive memory pages, The MLC memory page linked list is used to store the address of the MLC memory page, and the active state of the memory page is recorded through these memory page linked lists.

[0094] In a specific implementation, idle SLC memory pages are memo...

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PUM

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Abstract

The invention relates to the field of storage technology, in particular to a method and device for processing memory pages in memory, so as to obtain higher access performance and larger storage capacity. In the method for processing memory pages in the memory provided by the present invention, the memory pages in the memory include idle single-layer unit SLC memory pages, active SLC memory pages, inactive SLC memory pages and multi-layer unit MLC memory pages; The processing method includes: when it is determined that the number of free single-level unit SLC memory pages of any virtual machine VM is less than the set threshold, converting one free SLC memory page into two MLC memory pages; The data in the memory page is copied to the converted two MLC memory pages; the storage space in the two inactive SLC memory pages is released to obtain two free SLC memory pages.

Description

technical field [0001] The invention relates to the field of storage technology, in particular to a method and device for processing memory pages in memory. Background technique [0002] With the development of virtualization technology, the demand for hardware resources such as memory resources is getting higher and higher. Due to the high energy consumption of traditional Dynamic Random Access Memory (DRAM) and high difficulty in capacity expansion, new types of memory with low energy consumption, large capacity and non-volatile properties, such as Phase Change Memory (PCM) , will be expected to replace traditional DRAM memory. [0003] PCM is a new generation of non-volatile memory, which uses the reversible phase transition of materials to store information, and can realize single-level cell (Single-Level Cell, SLC) storage and multi-level cell (Multi-Level Cell, MLC) Storage: SLC is characterized by high cost, small capacity, and fast speed, while MLC is characterized...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F12/02G06F3/06
CPCG06F12/02G06F2212/1036G06F2212/7208G06F12/0246G06F2212/7206G06F2212/7204G06F12/023G06F12/0253G06F12/122G06F2212/251
Inventor 刘铎邵子立龙林波
Owner HUAWEI TECH CO LTD
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