Inverted blue light quantum dot thin film electroluminescence device and preparation method thereof
A technology for electroluminescent devices and quantum dots to emit light, applied in electrical components, semiconductor devices, circuits, etc., can solve the problem of high hole injection potential barrier, and achieve the effect of solving the high hole injection potential barrier
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[0043] Such as figure 2 The preparation method of the above-mentioned inverted blue light quantum dot thin film electroluminescent device includes the following steps:
[0044] S10 , providing a substrate 10 and cleaning the substrate 10 .
[0045] The substrate 10 is usually made of glass with high transmittance.
[0046] The operation of cleaning the substrate 10 is as follows: the substrate 10 is ultrasonically treated with detergent, acetone, ethanol and isopropanol for 15 minutes respectively.
[0047] S20, forming a cathode 20 on the cleaned substrate obtained in S10.
[0048] The material of the cathode 20 is indium tin oxide (ITO), fluorine doped tin oxide (FTO), aluminum doped zinc oxide (AZO) or indium doped zinc oxide (IZO).
[0049] The thickness of the cathode 20 is 80 nm to 200 nm.
[0050] In the operation of forming the cathode 20 on the cleaned substrate obtained in S10, the formation method of the cathode 20 includes evaporation, spraying, sputtering, el...
Embodiment 1
[0069] First, the glass substrate was ultrasonically treated with detergent, acetone, ethanol and isopropanol for 15 min each. Then sputter a layer of ITO conductive film with a thickness of 150nm on the glass substrate, and then perform UV-ozone treatment for 15min.
[0070] Then, the electron transport layer was prepared by solution spin coating in a glove box filled with nitrogen and with extremely low water and oxygen content, using 20 mg / mL ZnO nanoparticle ethanol solution at a speed of 1500 rpm, annealing at 150 °C for 30 min, and a thickness of 40 nm. Afterwards, the quantum dot light-emitting layer was prepared by using 10 mg / mL blue-light CdSe@ZnS quantum dot toluene solution at a speed of 2000 rpm, annealing at 150 °C for 30 min, and a thickness of 20 nm to obtain a semi-finished product.
[0071] Afterwards transfer the semi-finished product to a pressure of 10 -4 In the high-vacuum cavity under Pa, 0.8nm TBPe was vacuum-deposited sequentially as the blue light en...
Embodiment 2
[0073] First, the glass substrate was ultrasonically treated with detergent, acetone, ethanol and isopropanol for 15 min each. Then sputter a layer of ITO conductive film with a thickness of 150nm on the glass substrate, and then perform UV-ozone treatment for 15min.
[0074] Then, the electron transport layer was prepared by solution spin coating in a glove box filled with nitrogen and with extremely low water and oxygen content, using 20 mg / mL ZnO nanoparticle ethanol solution at a speed of 3000 rpm, annealing at 150 °C for 30 min, and a thickness of 30 nm. Afterwards, the quantum dot light-emitting layer was prepared by using 10 mg / mL blue-light CdSe@ZnS quantum dot toluene solution at a speed of 2000 rpm, annealing at 150 °C for 30 min, and a thickness of 20 nm to obtain a semi-finished product.
[0075] Afterwards transfer the semi-finished product to a pressure of 10 -4 In the high vacuum cavity under Pa, 1.5nm BCzVB was vacuum-deposited as the blue light energy transfe...
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