Green light quantum dot thin film electroluminescent device and preparation method thereof
An electroluminescent device, quantum dot light emitting technology, applied in the direction of electric solid device, semiconductor/solid device manufacturing, electrical components, etc., can solve the problem of high hole injection barrier
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[0046] Such as figure 2 The preparation method of the above-mentioned green light quantum dot thin film electroluminescent device shown comprises the following steps:
[0047] S10 , providing a substrate 10 and cleaning the substrate 10 .
[0048] The substrate 10 is usually made of glass with high transmittance.
[0049] The operation of cleaning the substrate 10 is as follows: the substrate 10 is ultrasonically treated with detergent, acetone, ethanol and isopropanol for 15 minutes respectively.
[0050] S20 , forming an anode 20 on the cleaned substrate 10 obtained in S10 .
[0051] The material of the anode 20 is indium tin oxide (ITO), fluorine doped tin oxide (FTO), aluminum doped zinc oxide (AZO) or indium doped zinc oxide (IZO).
[0052] The thickness of the anode 20 is 80nm-200nm.
[0053] In the operation of forming the anode 20 on the cleaned substrate obtained in S10, the formation method of the anode 20 includes evaporation, spraying, sputtering, electrochemi...
Embodiment 1
[0075] First, the glass substrate was ultrasonically treated with detergent, acetone, ethanol and isopropanol for 15 min each. Then sputter a layer of ITO conductive film with a thickness of 150nm on the glass substrate, and then perform UV-ozone treatment for 15min.
[0076] Then, the solution spin coating method was used to spin the mixture of PEDOT and PSS with a mass ratio of 3:1 to prepare the hole injection layer, the rotation speed was 5000 rpm, annealed at 150 ° C for 30 min, and the thickness of the hole injection layer was 20 nm. Then spin-coat 18 mg / mL poly-TPD in chlorobenzene solution to prepare a hole transport layer at a rotation speed of 3000 rpm, anneal at 110° C. for 60 min, and have a thickness of 40 nm. Afterwards, the green light quantum dot light-emitting layer was prepared by using 7mg / mL green light CdSe@ZnS quantum dot toluene solution, rotating at 2000rpm, annealing at 150°C for 30min, with a thickness of 12nm to obtain a semi-finished product.
[00...
Embodiment 2
[0079] First, the glass substrate was ultrasonically treated with detergent, acetone, ethanol and isopropanol for 15 min each. Then sputter a layer of ITO conductive film with a thickness of 150nm on the glass substrate, and then perform UV-ozone treatment for 15min.
[0080] Next, the solution spin coating method was used to spin a mixture of PEDOT and PSS with a mass ratio of 3:1 to prepare a hole injection layer at a rotation speed of 5000 rpm, annealing at 150° C. for 30 min, and a thickness of 20 nm. Then spin-coat 18 mg / mL poly-TPD in chlorobenzene solution to prepare a hole transport layer at a rotation speed of 3000 rpm, anneal at 110° C. for 60 min, and have a thickness of 40 nm. Afterwards, the green light quantum dot light-emitting layer was prepared, using 5 mg / mL green light CdSe@ZnS quantum dot toluene solution, rotating at 2000 rpm, annealing at 150 °C for 30 min, with a thickness of 8 nm to obtain a semi-finished product.
[0081] Afterwards transfer the semi-...
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