Inverted green light quantum dot thin film electroluminescence device and preparation method thereof
A technology for electroluminescent devices and quantum dots to emit light, which can be applied in the fields of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc. Effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0044] Such as figure 2 The method for preparing the above-mentioned inverted green light quantum dot thin film electroluminescent device includes the following steps:
[0045] S10. Provide the substrate 10 and clean the substrate 10.
[0046] The substrate 10 usually selects glass with a higher transmittance.
[0047] The operation of cleaning the substrate 10 is: the substrate 10 is ultrasonically treated with detergent, acetone, ethanol and isopropanol each for 15 minutes in sequence.
[0048] S20, forming a cathode 20 on the cleaned substrate obtained in S10.
[0049] The material of the cathode 20 is indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), or indium-doped zinc oxide (IZO).
[0050] The thickness of the cathode 20 is 80 nm to 200 nm.
[0051] In the operation of forming the cathode 20 on the cleaned substrate obtained in S10, the method for forming the cathode 20 includes evaporation, spraying, sputtering, electrochemical evaporation, ...
Embodiment 1
[0071] First, the glass substrate was ultrasonically treated with detergent, acetone, ethanol, and isopropanol for 15 minutes. Then, a layer of ITO conductive film with a thickness of 150nm was sputtered on the glass substrate, and then UV-ozone was performed for 15min.
[0072] Then, the electron transport layer was prepared with a 20mg / mL ZnO nanoparticle ethanol solution in a glove box filled with nitrogen and very low water and oxygen content by solution spin coating method, rotating speed was 1500rpm, annealing at 150℃ for 30min, thickness 40nm. Then, the quantum dot light-emitting layer was prepared, using a 10 mg / mL green CdSe@ZnS quantum dot toluene solution, rotating at 2000 rpm, annealing at 150° C. for 30 min, and having a thickness of 20 nm to obtain a semi-finished product.
[0073] Then transfer the semi-finished product to a pressure of 10 -4 In the high vacuum chamber under Pa, 0.6nm Alq is sequentially vacuum evaporated 3 As the green light energy transfer layer, 5...
Embodiment 2
[0075] First, the glass substrate was ultrasonically treated with detergent, acetone, ethanol, and isopropanol for 15 minutes. Then, a layer of ITO conductive film with a thickness of 150nm was sputtered on the glass substrate, and then UV-ozone was performed for 15min.
[0076] Then, the electron transport layer was prepared with a solution spin coating method in a glove box filled with nitrogen and extremely low water and oxygen content, using a 20 mg / mL ZnO nanoparticle ethanol solution, at a rotation speed of 3000 rpm, annealed at 150° C. for 30 min, and a thickness of 30 nm. Then, the quantum dot light-emitting layer was prepared, using a 10 mg / mL green CdSe@ZnS quantum dot toluene solution, rotating at 2000 rpm, annealing at 150° C. for 30 min, and having a thickness of 20 nm to obtain a semi-finished product.
[0077] Then transfer the semi-finished product to a pressure of 10 -4 In the high-vacuum chamber under Pa, 1.5nm C545 is successively vacuum deposited as the green li...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More