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Inverted white light quantum dot thin film electroluminescent device and preparation method thereof

An electroluminescent device and quantum dot light-emitting technology, which is applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as hole-electron injection imbalance, difficult formation of light-emitting excitons, and poor light-emitting spectrum. , to achieve the effect of solving the higher hole injection barrier

Inactive Publication Date: 2018-03-06
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, since the work function of the transparent anode commonly used in thin film electroluminescent devices is less than 5eV, it is far from the HOMO energy level (~6.5eV, ~6.8eV) of green QDs and blue QDs, resulting in an unbalanced hole-electron injection. , thus reducing the efficiency of thin film electroluminescent devices
In white quantum dot electroluminescent devices (QLEDs) with a red, blue, and green three-color mixed light-emitting layer structure, blue QDs and green QDs light-emitting excitons are difficult to form, resulting in relatively blue and green components in the spectrum of white QLEDs devices. The red light component is weak, resulting in poor luminescence spectrum of traditional white light quantum dot electroluminescent devices

Method used

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  • Inverted white light quantum dot thin film electroluminescent device and preparation method thereof
  • Inverted white light quantum dot thin film electroluminescent device and preparation method thereof
  • Inverted white light quantum dot thin film electroluminescent device and preparation method thereof

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preparation example Construction

[0057] Such as figure 2 The preparation method of the above-mentioned inverted white light quantum dot thin film electroluminescent device includes the following steps:

[0058] S10 , providing a substrate 10 and cleaning the substrate 10 .

[0059] The substrate 10 is usually made of glass with high transmittance.

[0060] The operation of cleaning the substrate 10 is as follows: the substrate 10 is ultrasonically treated with detergent, acetone, ethanol and isopropanol for 15 minutes respectively.

[0061] S20, forming a cathode 20 on the cleaned substrate obtained in S10.

[0062] The material of the cathode 20 is indium tin oxide (ITO), fluorine doped tin oxide (FTO), aluminum doped zinc oxide (AZO) or indium doped zinc oxide (IZO).

[0063] The thickness of the cathode 20 is 80 nm to 200 nm.

[0064] In the operation of forming the cathode 20 on the cleaned substrate obtained in S10, the formation method of the cathode 20 includes evaporation, spraying, sputtering, e...

Embodiment 1

[0093] First, the glass substrate was ultrasonically treated with detergent, acetone, ethanol and isopropanol for 15 min each. Then sputter a layer of ITO conductive film with a thickness of 150nm on the glass substrate, and then perform UV-ozone treatment for 15min.

[0094] Then, the electron transport layer was prepared by solution spin coating in a glove box filled with nitrogen and with extremely low water and oxygen content, using 20mg / mL ZnO nanoparticle ethanol solution at a speed of 1500rpm, annealing at 150°C for 30min, and a thickness of 40nm. Then prepare the red, green and blue mixed quantum dot light-emitting layer, using the toluene solution of the mixture of CdSe@ZnS red light quantum dots, CdSe@ZnS green light quantum dots and CdSe@ZnS blue light quantum dots with a mass ratio of 1:2.5:4, spin coating The concentration is 10mg / mL, the rotation speed is 2000rpm, annealed at 150°C for 30min, and the thickness is 20nm to obtain a semi-finished product.

[0095] ...

Embodiment 2

[0097] First, the glass substrate was ultrasonically treated with detergent, acetone, ethanol and isopropanol for 15 min each. Then sputter a layer of ITO conductive film with a thickness of 150nm on the glass substrate, and then perform UV-ozone treatment for 15min.

[0098] Then, the electron transport layer was prepared by solution spin coating in a glove box filled with nitrogen and with extremely low water and oxygen content, using 20mg / mL ZnO nanoparticle ethanol solution at a speed of 1500rpm, annealing at 150°C for 30min, and a thickness of 40nm. Then prepare the red, green and blue mixed quantum dot light-emitting layer, using the toluene solution of the mixture of CdSe@ZnS red light quantum dots, CdSe@ZnS green light quantum dots and CdSe@ZnS blue light quantum dots with a mass ratio of 1:2.5:4, spin coating The concentration is 10mg / mL, the rotation speed is 2000rpm, annealed at 150°C for 30min, and the thickness is 20nm to obtain a semi-finished product.

[0099] ...

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Abstract

The invention discloses an inverted white light quantum dot thin film electroluminescent device and a preparation method thereof, which comprises sequentially stacked substrates, cathodes, electron transport layers, red, green and blue mixed quantum dot luminescent layers, energy transport layers, hole transport layers, A hole injection layer and an anode; the energy transfer layer includes a laminated green light energy transfer layer and a blue light energy transfer layer, and the thickness of the energy transfer layer is 0.3nm-3nm. This inverted white quantum dot thin film electroluminescent device uses an energy transfer layer as an auxiliary layer for the formation of light-emitting excitons in the red, green and blue mixed quantum dot light-emitting layer, so that the light-emitting excitons can be formed not only by direct injection, but also through energy transfer. After the energy transfer layer is formed, the light-emitting excitons reach the red, green and blue mixed quantum dot light-emitting layer through energy transfer to make them emit light. Compared with the traditional white light quantum dot thin film electroluminescent device, this white light quantum dot The emission spectrum of the dot thin film electroluminescent device is better.

Description

technical field [0001] The invention relates to the field of thin film electroluminescent devices, in particular to an inverted white light quantum dot thin film electroluminescent device and a preparation method thereof. Background technique [0002] Quantum dots (quantumdots, QDs) are composed of a limited number of atoms, and the three dimensions are all on the order of nanometers. Quantum dots are generally spherical or quasi-spherical, and are nanoparticles made of semiconductor materials (usually composed of IIB-VIA or IIIA-VA elements) with a stable diameter of 2-20 nm. Quantum dots are aggregates of atoms and molecules on the nanometer scale, which can be composed of a semiconductor material, such as IIB.VIA group elements (such as CdS, CdSe, CdTe, ZnSe, etc.) or IIIA.VA group elements (such as InP , InAs, etc.), can also be composed of two or more semiconductor materials. As a novel semiconductor nanomaterial, quantum dots have many unique nano-properties and can ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54
CPCH10K50/115H10K50/125H10K2102/321
Inventor 曹进周洁谢婧薇魏翔俞浩健
Owner SHANGHAI UNIV