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Composite film and its preparation method and application

A composite thin film and thin film technology, applied in semiconductor/solid-state device manufacturing, organic semiconductor devices, electric solid-state devices, etc., can solve the problems of high hole injection potential barrier and poor energy level matching relationship, so as to improve device performance, enhance Barrier effect, cost reduction effect

Active Publication Date: 2020-07-31
TCL CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a composite thin film and its preparation method, aiming to solve the poor energy level matching relationship between the nickel oxide hole transport layer and the anode and the quantum dot light-emitting layer in the quantum dot light-emitting diode, resulting in the hole injection potential high barriers

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  • Composite film and its preparation method and application
  • Composite film and its preparation method and application

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preparation example Construction

[0029] Correspondingly, a kind of preparation method of composite film comprises the following steps:

[0030] S01. Prepare nickel oxide colloidal solutions with different particle sizes of nano-nickel oxide respectively;

[0031] S02. Provide a substrate, and deposit the nickel oxide colloidal solution sequentially on the substrate according to the particle size of the nano-nickel oxide in the nickel oxide colloidal solution from small to large or from large to small, to prepare nano-nickel oxide. The N-layer nano-nickel oxide film whose particle size increases or decreases layer by layer is obtained to obtain a composite film, wherein the value range of N satisfies: 3≤N≤9.

[0032] The preparation method of the composite thin film provided by the embodiment of the present invention only needs to simply prepare nickel oxide colloidal solutions with different particle sizes and deposit them into films sequentially through a simple precipitation method, so that the energy level...

Embodiment 1

[0080] A kind of nano-nickel oxide composite film, its preparation method comprises the following steps:

[0081] First, an appropriate amount of nickel acetate is added to 50 ml of distilled water solvent to form a nickel salt solution with a total concentration of 0.1 mol / L. At the same time, an appropriate amount of potassium hydroxide powder is dissolved in another 50ml of distilled water solvent to form a lye with a concentration of 0.3mol / L. Then the nickel salt solution was heated to 50° C., and the potassium hydroxide solution was added dropwise until the pH value of the mixed solution reached 9 and stopped. After the infusion of the potassium hydroxide solution was completed, the mixed solution was stirred at 50° C. for 1 h to obtain a green turbid solution. The turbid solution was centrifuged at a speed of 7000 rpm, and the obtained green precipitate was mixed with 50 ml of distilled water solvent and stirred for 10 min, and then centrifuged again at a speed of 7000...

Embodiment 2

[0087] A kind of nano-nickel oxide composite film, its preparation method comprises the following steps:

[0088] First, an appropriate amount of nickel nitrate is added to 50 ml of distilled water solvent to form a nickel salt solution with a total concentration of 0.1 mol / L. At the same time, an appropriate amount of sodium hydroxide powder is dissolved in another part of 50ml distilled water solvent to form a lye with a concentration of 0.3mol / L. Subsequently, the nickel salt solution was kept at room temperature, and the sodium hydroxide solution was added dropwise until the pH value of the mixed solution reached 10 and stopped. After the instillation of the sodium hydroxide solution was completed, the mixed solution was stirred at room temperature for 30 min to obtain a green turbid solution. The cloudy solution was centrifuged at a speed of 7000 rpm, and the obtained green precipitate was mixed with 50 ml of ethanol solvent and stirred for 10 min, and then centrifuged a...

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Abstract

The invention provides a composite film, the composite film comprises sequentially laminated and bonded N-layer films, the N-layer films are all nano-nickel oxide films, and from the first film to the N-th film, the nano-oxide The particle size of nano-nickel oxide in the nickel film increases layer by layer, wherein the value range of N satisfies: 3≤N≤9.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a composite film and its preparation method and application. Background technique [0002] Recently, with the continuous development of display technology, quantum dot light-emitting diodes (QLEDs) with quantum dot materials as the light-emitting layer have shown great application prospects. Due to its high luminous efficiency, controllable luminous color, high color purity, good device stability, and flexible applications, QLED has attracted more and more attention in the fields of display technology and solid-state lighting. [0003] At present, in quantum dot light-emitting diodes, organic polymer materials (such as PEDOT:PSS, TFB, etc.) are widely used as hole transport layers due to their high work function, high transmittance, good film formation and good conductivity. . However, due to its high sensitivity to water and oxygen, quantum dot light-emitting diod...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K71/12H10K50/156H10K2102/00H10K71/00
Inventor 吴龙佳
Owner TCL CORPORATION