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Pull device for driving data lines

A data line and device technology, applied in the field of pulling devices, can solve problems such as data loss and instability

Active Publication Date: 2018-12-28
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

SRAM can be used to retain data, but it is traditionally not stable given that data is eventually lost when the memory loses power

Method used

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  • Pull device for driving data lines
  • Pull device for driving data lines
  • Pull device for driving data lines

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The following disclosure provides many different embodiments, or examples, for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are only examples and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include embodiments in which the first component and the second component are in direct contact, and may include additional components formed between the first component and the second component An embodiment such that the first part and the second part are not in direct contact. Additionally, the invention may repeat reference numerals and / or characters in multiple instances. This repetition is for simplicity and clarity, but by itself does not indicate a relationship between the various embodiments and / or configurations discussed.

[0023] In addition, for...

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PUM

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Abstract

Embodiments of the present invention relate to a circuit including a first data line, a second data line, a first pulling device, a second pulling device, a third pulling device and a fourth pulling device. The first pull device is configured to: be activated or deactivated in response to the first control signal; and is configured to: when the first pull device is activated, based on the second signal at the second data line, the first data line The first signal at is pulled to the voltage level of the first voltage. The second pull device is configured to: be activated or deactivated in response to the second control signal; and is configured to: when the second pull device is activated, based on the first signal at the first data line, the second data The second signal at the line is pulled towards the voltage level of the first voltage.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and more particularly, to a pull device for driving data lines. Background technique [0002] Static Random Access Memory (SRAM) is a type of semiconductor memory that uses bistable latch circuits to store data. SRAM can be used to retain data, but it has traditionally been unstable since data is eventually lost when power to the memory is lost. The SRAM circuit includes a plurality of SRAM memory cells. There are several types of SRAM memory cells, eg, 6-transistor (6T) SRAM or dual-port 8-transistor (8T) SRAM. Typically, at least two transistors in an SRAM cell are controlled by corresponding control lines, also called "word lines" and used as switches to selectively connect the bistable latch circuit of the SRAM cell to the two The two data lines are also called "bit line" and "bit line bar (also called reverse phase line)" or "bit line" and "complementary bit line". [...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/414
CPCG11C11/414G11C7/12G11C11/419G11C7/10G11C7/18G11C8/06G11C8/18G11C7/22H10B10/12H10B10/18
Inventor 杨皓义黄家恩李政宏林耕庆杨荣平
Owner TAIWAN SEMICON MFG CO LTD