A kind of efuse circuit and programmable storage device
A storage device and circuit technology, which is applied in the field of programming control, can solve the problems of multi-metal layer fuse blown and reliability difficult to control, etc.
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Embodiment 1
[0037] A first embodiment of the present invention provides an EFUSE circuit.
[0038] figure 1 A circuit structure diagram of the EFUSE circuit provided by the first embodiment of the present invention is shown, and for convenience of description, only parts related to the embodiment of the present invention are shown.
[0039] An EFUSE circuit, the EFUSE circuit comprising: a voltage dividing resistor R1, a gate oxide breakdown tube 1, a switch S1, a switch S2 and a NOT gate circuit 2;
[0040] The voltage dividing resistor R1 and the gate oxide breakdown tube 1 are connected in series between the first power supply VDD and the ground, the common end of the voltage dividing resistor R1 and the gate oxide breakdown tube 1 is connected to the NOT gate circuit 2 through the switch S2, and the gate oxide breakdown The control terminal of tube 1 is connected to the second power supply VP through switch S1;
[0041]When not programmed, the switch S1 is controlled to be turned of...
no. 2 example
[0055] The second embodiment of the present invention provides a programmable storage device.
[0056] image 3 A circuit structure diagram of the programmable storage device provided by the second embodiment of the present invention is shown, and for convenience of description, only parts related to the embodiment of the present invention are shown.
[0057] A programmable storage device, the programmable storage device includes an EFUSE circuit, and the EFUSE circuit includes: a voltage dividing resistor R1, a gate oxide breakdown tube 1, a switch S1, a switch S2, and a NOT gate circuit 2;
[0058] The voltage dividing resistor R1 and the gate oxide breakdown tube 1 are connected in series between the first power supply VDD and the ground, the common end of the voltage dividing resistor R1 and the gate oxide breakdown tube 1 is connected to the NOT gate circuit 2 through the switch S2, and the gate oxide breakdown The control terminal of tube 1 is connected to the second po...
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