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Three-layer Josephson junction structure and its formation method

A technology of dielectric layer and interlayer dielectric layer, applied in the field of superconductivity

Active Publication Date: 2019-09-03
INT BUSINESS MASCH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This material close to the qubits may include imperfections that support defects known as two-level systems (TLSs)

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  • Three-layer Josephson junction structure and its formation method
  • Three-layer Josephson junction structure and its formation method
  • Three-layer Josephson junction structure and its formation method

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Embodiment Construction

[0027] Currently, highly coherent superconducting qubits are fabricated using Al / AlO x / Al Josephson junction combined with an interdigital shunt capacitor usually made of Nb. This scheme minimizes the presence of deposited dielectrics containing secondary systems (TLSs), which are known to reduce qubit coherence times. However, scaling up such processes to large numbers of stable, reproducible Josephson junctions is problematic.

[0028] Meanwhile, three-layer junction processes are now commonly used to manufacture Josephson junction logic devices and integrated circuits as well as Josephson junction voltage standards. This industry standard scheme involves Nb / AlO x / Nb three-layer film. This durable three-layer film combines dry etching, conformally deposited interlayer dielectric (ILD) and chemical mechanical polishing (CMP) planarization techniques to achieve very controllable, reproducible and stable Align the deep submicron junctions where the counter electrode conta...

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Abstract

The invention discloses a three-layer Josephson junction structure and a forming method thereof. The dielectric layer is on the base electrode layer, and the base electrode layer is on the substrate. A counter electrode layer is on the dielectric layer. The first and second counter electrodes are formed from the counter electrode layer. The first and second dielectric layers are formed of dielectric layers. The first and second base electrodes are formed of a base electrode layer. The first counter electrode, the first dielectric layer and the first base electrode form a first stack. The second counter electrode, the second dielectric layer and the second base electrode form a second stack. A shunt capacitor is between the first and second substrate electrodes. An ILD layer is deposited on the substrate, the first and second counter electrodes, and the first and second base electrodes. A contact bridge connects the first and second opposing electrodes. By removing the ILD, an air gap is formed under the contact bridge.

Description

technical field [0001] The present invention relates to superconducting technology, and more particularly, to a three-layer Josephson junction with small air bridges and no interlayer dielectric for superconducting qubits. Background technique [0002] In an approach known as circuit quantum electrodynamic systems, quantum computing employs active superconducting devices called qubits to manipulate and store quantum information, and resonators (e.g., as two-dimensional (2D ) planar waveguides or as three-dimensional (3D) microwave cavities) to read and facilitate the interaction between qubits. Each superconducting qubit includes one or more Josephson junctions that are shunted by a capacitor connected in parallel with it. The qubits are capacitively coupled to a 2D or 3D microwave cavity. The energy associated with the qubit exists in the electromagnetic field around this Josephson junction, especially near the relatively large shunt capacitor structure. To date, the mai...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L39/22H01L39/24
CPCH10N60/0156H10N60/01H10N60/12H01L28/40H10N69/00H10N60/0912H10N60/805
Inventor J.B.张G.W.吉布森M.B.凯琴
Owner INT BUSINESS MASCH CORP