Unlock instant, AI-driven research and patent intelligence for your innovation.

trench etch process

A process method and groove technology, which are applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve the problems of reducing the application level of devices, and achieve the effect of improving uniformity and optimal performance

Active Publication Date: 2019-02-05
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to ensure the manufacturability of the device, it is necessary to consider the change of electrical parameters caused by deep fluctuations in the design and manufacture, which usually requires the designer to consciously reduce the application level of the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • trench etch process
  • trench etch process
  • trench etch process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0051] Such as image 3 Shown is the flowchart of the trench etching process method in the embodiment of the present invention; as Figure 4A to Figure 4J Shown is a schematic diagram of the device structure in each step of the trench etching process method of the embodiment of the present invention; the trench etching process method of the embodiment of the present invention includes the following steps:

[0052] Step 1, such as Figure 4A As shown, a semiconductor substrate 1 is provided, and a first epitaxial layer 2 is formed on the surface of the semiconductor substrate 1 . Figure 4A In , Sub is marked in the semiconductor substrate 1 , and EPI1 is marked in the first epitaxial layer 2 .

[0053] Preferably, the semiconductor substrate 1 is a silicon substrate, and the first epitaxial layer 2 is a silicon epitaxial layer. The subsequently formed second epitaxial layer 4 is also a silicon epitaxial layer.

[0054] Step 2, forming a pattern of a dielectric film 3 on the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
depthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a groove etching process. The groove etching process comprises the following steps of 1, forming a first epitaxial layer on a surface of a semiconductor substrate; 2, forming a dielectric film pattern on a surface of the first epitaxial layer, wherein a dielectric film coverage region is arranged in a groove formation region; 3, forming a second epitaxial layer; 4, performing first etching on the second epitaxial layer by a photoetching process to form a groove, wherein a dielectric film is taken as an etching barrier layer in the first etching; and 5, removing the dielectric film. By the groove etching process, the groove depth can be accurately controlled, grooves at different positions and with different sizes in a wafer are enabled to have same depth, and the process stability can be greatly improved.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit manufacturing method, in particular to a MOSFET; the invention also relates to a groove etching process method. Background technique [0002] When the super junction MOSFET of the epitaxial filling type is manufactured, a deep trench etching process is required, such as the depth of the trench is >30 microns. Determined by the inherent properties of the etching machine itself, the groove depth varies by nearly 10% within the wafer. The change in depth will directly affect the breakdown voltage of the device. In order to ensure the manufacturability of the device, it is necessary to consider the change of electrical parameters caused by deep fluctuations in the design and manufacture, which usually requires the designer to consciously reduce the application level of the device. [0003] Such as Figure 1A and Figure 1B As shown, it is a schematic diagram of the depth comparison at differ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/762
CPCH01L21/76224
Inventor 柯行飞
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP