Quantum dot light-emitting layer preparation method, quantum dot light-emitting diode, and preparation method

Abstract

The invention discloses a quantum dot light-emitting layer preparation method, a quantum dot light-emitting diode, and a preparation method. The quantum dot light-emitting layer preparation method comprises the steps: preparing a quantum dot light-emitting layer; enabling the quantum dot light-emitting layer to be immersed into short chain ligand solution for 1s-10min through employing an in-situ ligand exchange method, taking out the quantum dot light-emitting layer, and then washing the surface of the quantum dot light-emitting layer through employing the solvent which is the same as the short chain ligand solution, so as to remove the residual short chain ligand. The method solves a problem that the quantum dot surface ligand affects the dispersibility through carrying out the in-situ ligand exchange of the quantum dot light-emitting layer. The method adjusts the space distance between quantum dots through the in-situ ligand exchange, and achieves the high-efficiency quantum dot light-emitting diode device through selecting the ligand with the optimal chain length. The method is simple through employing the in-situ ligand exchange method, is lower in implementation cost, and is suitable for the preparation of low-cost and large-size devices.

Description

technical field [0001] The invention relates to the technical field of light emitting diodes, in particular to a preparation method of a quantum dot light emitting layer, a quantum dot light emitting diode and a preparation method. Background technique [0002] In recent years, with the rapid development of display technology, quantum dot light-emitting diodes (QLEDs), which use semiconductor quantum dot materials as the light-emitting layer, have attracted extensive attention. Its good characteristics such as high color purity, high luminous efficiency, adjustable luminous color, and device stability make quantum dot light-emitting diodes have broad application prospects in flat panel displays, solid-state lighting and other fields. [0003] Although the performance of QLED (including device efficiency and lifetime) has been greatly improved through the improvement of quantum dot materials and the continuous optimization of QLED device structure, its efficiency is still far...

AI Technical Summary

Problems solved by technology

[0006] In view of the deficiencies in the prior art above, the object of the present invention is to provide a method for preparing a quantum dot light-emitting layer, a quantum dot light-emitting diode and a preparation method, aiming at solving the problem of the surface ligands of the existing quantum dot light-emitting layer affecting its dispersion in organic solvents. sexual problems

Images