A nanowire biosensor device with front gate regulation and its preparation method
A biosensor and nanowire technology, applied in the field of biosensors, can solve problems such as unsatisfactory and limited modulation of the working state of nanowires, and achieve the effect of low cost and simple process
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[0042] The present invention will be further elaborated below through specific embodiments in conjunction with the accompanying drawings.
[0043] The preparation method of the N-channel nanowire biosensing device with front gate regulation of this embodiment comprises the following steps:
[0044] 1) On a semiconductor substrate 1 of bulk silicon (100) SiO 2 , Si 3 N 4 stack structure as isolation layer 2, SiO 2 is to buffer Si 3 N 4 and the stress between the semiconductor substrate, such as figure 1 shown;
[0045] 2) On isolation layer 2 Polycrystalline silicon is used as the active layer 3, and ion implantation of As+ is performed, the implantation energy is 40Kev, and the implantation dose is 5E13cm -2 , RTP 950°C, annealing 5s, such as figure 2 shown;
[0046] 3) PECVD SiO 2 As a mask layer, electron beam photoresist is spin-coated on the surface of the mask layer, the first photoresist pattern is formed by electron beam exposure, and the mask layer ...
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