Method and device for eliminating pyrophoric by-products from ion implantation technology

A technology of ion implantation and spontaneous combustion, which is applied in the direction of metal material coating process, coating, gaseous chemical plating, etc., and can solve problems such as inappropriate design, harmful and harmful to human health and environment

Inactive Publication Date: 2017-01-04
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, current abatement techniques for eliminating gases used in semiconductor processing are not properly designed
These gases and particulate matter are harmful to both human health and the environment, as well as to semiconductor processing equipment such as processing pumps

Method used

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  • Method and device for eliminating pyrophoric by-products from ion implantation technology
  • Method and device for eliminating pyrophoric by-products from ion implantation technology
  • Method and device for eliminating pyrophoric by-products from ion implantation technology

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Embodiment Construction

[0017] Embodiments disclosed herein generally relate to plasma abatement processes and apparatus. Plasma abatement processes take foreline effluent from a processing chamber, such as an injection chamber, and react the effluent with reactants when the effluent contains pyrophoric byproducts. A plasma generator placed within the foreline path ionizes the effluent and reactants to facilitate the reaction between the effluent and reactants. Under conditions within the exhaust gas flow path, the ionized species react to form compounds that remain in the gas phase. In another embodiment, ionized species can react to form compounds that condense from the gas phase. The condensed particulate matter is then removed from the effluent by a collector. The apparatus may include an injection chamber, a plasma generator, one or more pumps and a scrubber.

[0018] figure 1 A schematic diagram of a processing system 100 according to embodiments disclosed herein is shown. The processing s...

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PUM

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Abstract

One implementation way disclosed by the invention relates to a plasma elimination process and device in general. According to the plasma elimination process, a foreline effluent is obtained from processing chambers of an injection chamber and the like, and the effluent reacts with a reactant. The effluent comprises pyrophoric by-products; a plasma generator put in a foreline path can ionize the effluent and the reactant to promote reaction between the effluent and the reactant. Ionized species react to form a compound kept in a gaseous phase in an exhaust stream path. According to another implementation way, the ionized species react to form the compound coagulated from the gaseous phase, and then coagulated particulate matters are removed from the effluent through a collector. The device comprises the injection chamber, the plasma generator, one or more pumps and a washer.

Description

technical field [0001] Embodiments of the present disclosure generally relate to elimination of semiconductor processing equipment. In particular, embodiments of the present disclosure relate to techniques for eliminating pyrophoric compounds present in effluents of semiconductor processing equipment. Background technique [0002] Due to regulatory requirements and environmental and safety considerations, effluents generated during semiconductor manufacturing processes contain many compounds that must be eliminated or treated prior to disposal. Among these compounds are pyrophoric materials present in the effluent from the injection process. However, current abatement techniques for abatement of gases used in semiconductor processing are not properly designed. These gases and particulate matter are harmful to both human health and the environment, as well as to semiconductor processing equipment such as processing pumps. [0003] Accordingly, there is a need in the art fo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01L21/67
CPCC23C16/4412H01J37/32669H01J37/32568H01J37/32082H01J37/32596H01J37/32541C23C16/0245
Inventor 达斯廷·W·胡迈克尔·S·考克斯正·袁
Owner APPLIED MATERIALS INC
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