Non-volatile memory element capable of reducing writing operation voltage and fabrication method thereof

Abstract

The invention belongs to the technical field of a non-volatile memory, and provides a non-volatile memory element capable of reducing a writing operation voltage and a fabrication method thereof. The non-volatile memory element comprises an inverted taper first electrode, a memory dielectric layer and a second electrode, wherein the memory dielectric layer comprises a first part and a second part, the first part is attached onto an outer side surface of the inverted taper first electrode, the second part is arranged in non-parallel to the outer side surface of the inverted taper first electrode so that the second part is connected with the first part and an included angle is formed, and the second electrode is formed at an inner side of the included angle formed between the first part and the second part of the memory dielectric layer. In the non-volatile memory element provided by the invention, an included angle structure of the memory dielectric layer is formed between the first electrode and the second electrode, thus, the writing operation voltage is reduced and is uniform, the non-volatile memory element is simple to fabricate and is low in cost.

Description

technical field [0001] The invention belongs to the technical field of nonvolatile memory, and relates to a storage element capable of reducing the write operation voltage of the nonvolatile memory element and a manufacturing method thereof. Background technique [0002] Aiming at the low power consumption and high density application goals of non-volatile semiconductor memory devices, a variety of researches have been carried out, including a series of explorations on materials, device structures, manufacturing methods and peripheral circuit design. [0003] Flash memory is representative of non-volatile storage in which stored data is retained even after power is removed. Flash memory is non-volatile, unlike volatile memory. However, flash memory has disadvantages of low integration and requires a large voltage to operate. [0004] Much research has been done on non-volatile memories including Magnetic Random Access Memory (MRAM), Ferroelectric Random Access Memory (FRAM...

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Problems solved by technology

In particular, for RRAMs, the conductive filaments formed by applying the initial breakdown voltage are randomly generated in the storage medium layer. As the size of the device shrinks, the conductive filaments are generated near the edge of the device. The possibility of etching the damaged area will increase, the size of the conductive filaments formed in the etching damaged area will be larger, and the current flowing through it will be larger, which will not be conducive to the requirement of low power consumption

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