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Flash memory device and data erasing method

A data erasing and flash memory technology, which is applied in the field of flash memory devices, can solve the problems of uncontrollable, fast critical voltage drift of storage cells, and excessive distribution range

Active Publication Date: 2020-02-07
POWERCHIP SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, a voltage pulse with a large voltage value often causes the drift speed of the threshold voltage of some memory cells to be too fast, and the distribution range of the threshold voltage of the erased memory cells is too large to be controlled.

Method used

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  • Flash memory device and data erasing method
  • Flash memory device and data erasing method
  • Flash memory device and data erasing method

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Experimental program
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Embodiment Construction

[0033] Please refer to figure 2 , figure 2 An action flow chart of a data erasing method for a flash memory according to an embodiment of the present invention is shown. In step S210 , a plurality of erasing voltages that increase sequentially are set, and multiple data erasing operations are performed on the memory cells of the flash memory according to the set erasing voltages respectively. In detail, when performing the first data erasing operation, the voltage value of the erasing voltage (first erasing voltage) can be set equal to the initial erasing voltage value, and the first erasing operation is performed according to the first erasing voltage Data wipe action. Then, when the second data erasing operation is to be performed, the voltage value of the erasing voltage (second erasing voltage) is set to be equal to the voltage value of the first erasing voltage plus a preset voltage increase value, and The second data erasing operation is performed according to the s...

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Abstract

A flash memory apparatus and data erasing method thereof. The data erasing method includes: setting a plurality of incremental erasing voltages sequentially, and operating a plurality of data erasing operations on memory cells according to the erasing voltages; recording a recoded erasing voltage corresponding to the last data erasing operation; setting a plurality of incremental reading voltage sequentially, operating a plurality of data reading operations on the memory cells, and recording a final reading voltage corresponding to the last reading operation; setting a final erasing voltage for operating a final erasing operation on the memory cells, wherein a voltage level of the final erasing voltage equals to a sum of voltage levels of an erasing verification voltage, the final reading voltage and the recorded erasing voltage.

Description

technical field [0001] The invention relates to a flash memory device, in particular to a data erasing method of the flash memory device. Background technique [0002] With the advancement of electronic technology, electronic products have become one of the necessary tools in people's lives. In order to provide sufficient information, today's electronic products often require fast and massive data storage media, and the non-volatile flash memory that can provide access plays an important role. [0003] In the known technical field, when the data erasing operation is to be performed on the storage units in the flash memory, the data erasing operation needs to be performed on all the storage units in an entire block. Please refer to figure 1 The distribution state diagram of the threshold voltage of memory cells in the flash memory is shown. Among them, in figure 1 includes memory cells in the erased state ERS and memory cells in the programmed state PGS. In the known tec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/14G11C16/34
CPCG11C16/14G11C16/26G11C16/3445G11C16/3468
Inventor 邓才科
Owner POWERCHIP SEMICON MFG CORP
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