A kind of preparation method of film-coated ceramic substrate for PCB drilling
A technology of ceramic substrate and coating film is applied in the field of preparation of coated ceramic substrate for PCB drilling, which can solve the problems of unsustainable coating performance and low processing precision of aluminum substrate coating, and achieve the effect of prolonging the service life.
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Embodiment 1
[0021] A preparation method of a film-coated ceramic substrate for PCB drilling, comprising the steps of:
[0022] Step 1. Preparation of ceramic substrate: Take 60Kg of nano-alumina, 10Kg of zirconia, 2 Kg of titanium oxide, 5 Kg of white carbon black and 3 Kg of calcium oxide, put them into a grinder to grind and disperse evenly, put them into a mold, and cold press Forming, and then high-temperature calcination, the calcination temperature is 1250°C, the calcination pressure is 650MPa, the calcination time is 5h, and the ceramic substrate is prepared after cooling;
[0023] Step 2, prepare modified silicone resin: take polyethylene terephthalate 0.8 Kg, polyisocyanate 0.6Kg, terephthalic acid 0.15 Kg, dioctyl phthalate 0.12 Kg, methyl phenyl Dimethoxysilane 0.34 Kg, polyphenylsiloxane 0.41Kg and alkyl polydimethylsiloxane 0.58Kg are put into the reactor, add deionized water 0.8 Kg, stir evenly, add cumene over Hydrogen oxide 0.18 Kg, heated for reaction, polymerization rea...
Embodiment 2
[0026] A preparation method of a film-coated ceramic substrate for PCB drilling, comprising the steps of:
[0027] Step 1. Preparation of ceramic substrate: Take 80Kg of nano-alumina, 20 Kg of zirconia, 6 Kg of titanium oxide, 10Kg of white carbon black and 8 Kg of calcium oxide, put them into a grinder, grind and disperse evenly, put them into a mold, and cold press Forming, and then high-temperature calcination, the calcination temperature is 1300°C, the calcination pressure is 700MPa, the calcination time is 7h, and the ceramic substrate is prepared after cooling;
[0028] Step 2, prepare modified silicone resin: take polyethylene terephthalate 0.8 Kg, polyisocyanate 0.6Kg, terephthalic acid 0.15 Kg, dioctyl phthalate 0.12 Kg, methyl phenyl Dimethoxysilane 0.34 Kg, polyphenylsiloxane 0.41Kg and alkyl polydimethylsiloxane 0.58Kg are put into the reactor, add deionized water 0.8 Kg, stir evenly, add cumene over Hydrogen oxide 0.18 Kg, heated for reaction, polymerization reac...
Embodiment 3
[0031] A preparation method of a film-coated ceramic substrate for PCB drilling, comprising the steps of:
[0032] Step 1. Preparation of ceramic substrate: Take 72Kg of nano-alumina, 15 Kg of zirconia, 5 Kg of titanium oxide, 710Kg of white carbon black and 6 Kg of calcium oxide, put them into a grinder, grind and disperse evenly, put them into a mold, and cold press Forming, and then high-temperature calcination, the calcination temperature is 1280°C, the calcination pressure is 670MPa, the calcination time is 6h, and the ceramic substrate is prepared after cooling;
[0033] Step 2, preparation of modified silicone resin: take polyethylene terephthalate 0.5Kg, polyisocyanate 0.3Kg, terephthalic acid 0.1Kg, dioctyl phthalate 0.1Kg, methyl phenyl Dimethoxysilane 0.2 Kg, polyphenylsiloxane 0.2 Kg and alkyl polydimethylsiloxane 0.2Kg are put into the reactor, add deionized water 0.6Kg, stir well, add cumene over Hydrogen oxide 0.15 Kg, heated for reaction, polymerization reacti...
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