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Forming method of light-emitting device

A technology for light-emitting devices and photoresist layers, applied in semiconductor devices, electrical solid devices, electrical components, etc., can solve problems that hinder the application of metal plating technology

Inactive Publication Date: 2019-07-09
NANYANG TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This requirement hinders the application of metal plating technology in the inverted LED manufacturing process

Method used

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  • Forming method of light-emitting device
  • Forming method of light-emitting device
  • Forming method of light-emitting device

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Embodiment Construction

[0029] The following detailed description refers to the accompanying drawings that illustrate by way of illustration specific details and embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. Other embodiments may be utilized and structural and logical changes may be made without departing from the scope of the present invention. The various embodiments are not necessarily mutually exclusive, as some embodiments can be combined with one or more other embodiments to form new embodiments.

[0030] Various embodiments provide methods of forming light emitting devices, such as inverted high power LEDs, using mesh metal plating techniques. In contrast to conventional techniques, various embodiments form metal supports (also referred to as meshed metal islands) as supports for subsequent fabrication processes. When this method is applied to inverted fabrication, p and ...

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Abstract

Various embodiments provide a method of forming a light-emitting device. The method may include providing a multi-layer structure, wherein the multi-layer structure includes a substrate, a first semiconductor layer of a first conductivity type, an active layer and a second semiconductor layer of a second conductivity type in sequence, and includes at least one metal contact formed on at least one of the first semiconductor layer and the second semiconductor layer. The method further includes forming at least one trench over the at least one metal contact, and forming at least one metal support in the at least one trenches.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to US Provisional Application No. 61 / 996,662, filed May 14, 2014, which is hereby incorporated by reference in its entirety for all purposes. technical field [0003] Embodiments generally relate to light emitting devices and methods of forming light emitting devices. Background technique [0004] Light emitting diodes (LEDs), for example, GaN (gallium nitride) based LEDs are considered as the light source of choice for next generation solid state lighting, and research and development in this area has made tremendous progress over the past few decades. High-brightness GaN LEDs have been used in various applications, such as LCD backlighting, traffic signs, and full-color displays. [0005] Currently, GaN LEDs are beginning to enter the general lighting market. To accelerate penetration into the general lighting market, further improvements in the performance of GaN LEDs are required....

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/62H01L33/36
CPCH01L33/0093H01L33/22H01L33/38H01L33/486H01L33/62H01L33/647H01L2224/16225H01L2933/0016H01L2933/0066H01L2933/0091
Inventor 鞠振刚刘伟张雪亮陈瑞添纪云张紫辉希勒米·沃尔坎·德米尔
Owner NANYANG TECH UNIV