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A Multi-Frequency Output Matching Network Applied in gsm RF Power Amplifier

An output matching network, RF power technology, applied in power amplifiers, amplifier input/output impedance improvement, high-frequency amplifiers, etc., can solve problems such as difficult to achieve, meet the requirements of harmonic suppression, high efficiency, good high The effect of the subharmonic suppression effect

Active Publication Date: 2022-07-08
RDA MICROELECTRONICS SHANGHAICO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the existing transformer is used as an impedance matching network, it is difficult to meet this requirement

Method used

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  • A Multi-Frequency Output Matching Network Applied in gsm RF Power Amplifier
  • A Multi-Frequency Output Matching Network Applied in gsm RF Power Amplifier
  • A Multi-Frequency Output Matching Network Applied in gsm RF Power Amplifier

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Experimental program
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Embodiment Construction

[0033] The power amplification of GSM signal adopts GMSK (Gaussian Filtered Minimum Shift Keying, Gaussian Filtered Minimum Shift Keying) modulation mode. This modulation method requires that the input signal of the RF power amplifier has a constant envelope (constant envelope), does not contain amplitude changes, but only has phase changes. The output power can then be controlled by the RAMP signal. GMSK modulation has very low requirements on the linearity of RF power amplifiers, allowing the use of nonlinear power amplifiers, but has higher requirements in terms of efficiency and harmonic suppression.

[0034] It is precisely because of the specific requirement that the GSM radio frequency power amplifier works in a saturated state (that is, the input signal power continues to increase, and the output power remains unchanged and will not increase), the application provides a multi-frequency output applied to the GSM radio frequency power amplifier. matching network, such a...

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Abstract

The present application discloses a multi-frequency output matching network applied to a GSM radio frequency power amplifier, which includes a transformer. The primary coil of the transformer adopts a winding with a middle tap, and the middle tap is connected to the working voltage; both ends of the primary coil serve as a pair of differential input ends of the output matching network, respectively receiving a pair of differential signals output by the amplifier circuit; the secondary of the transformer The stage coil adopts a winding, one end outputs a single-ended signal, and the other end is grounded. The primary coil of the transformer is also connected in parallel with an LC resonant circuit. The output end of the secondary coil of the transformer is also connected with an LC low-pass filter circuit as the single-ended output end of the output matching network. The output matching network of the present application can provide impedance matching in a wide frequency range, and also has an excellent harmonic suppression effect.

Description

technical field [0001] The present application relates to an impedance matching circuit in a radio frequency power amplifier, in particular to an impedance matching circuit applied to a radio frequency power amplifier in a GSM mode. Background technique [0002] In mobile communication terminals represented by mobile phones, radio frequency power amplifiers are indispensable. The RF power amplifier is located at the last stage of the transmitter, and is used to amplify the modulated RF signal to the required power value and send it to the antenna for transmission. [0003] When the characteristic length of a circuit is much smaller than the wavelength of the electromagnetic wave that the circuit operates on, the circuit can use a relatively simple lumped element model (also called lumped parameter model, lumped parameter model, lumped component model) model) to describe. [0004] When the characteristic size of a circuit is in the same or similar order of magnitude as the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03F1/56H03F3/19H03F3/21H03F3/24
CPCH03F1/56H03F3/19H03F3/21H03F3/245Y02D30/70
Inventor 林甲富柯庆福章乐江亮贾斌
Owner RDA MICROELECTRONICS SHANGHAICO LTD
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