Multi-frequency output matching network applied to GSM (Global System for Mobile Communications) radio-frequency power amplifier

An output matching network, RF power technology, applied in power amplifiers, amplifier input/output impedance improvement, high-frequency amplifiers, etc., can solve problems such as difficult to achieve, meet the requirements of harmonic suppression, high efficiency, good high The effect of the subharmonic suppression effect

Active Publication Date: 2017-05-10
RDA MICROELECTRONICS SHANGHAICO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the existing transformer is used as an impedance matching network, it is difficult to meet this requirement

Method used

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  • Multi-frequency output matching network applied to GSM (Global System for Mobile Communications) radio-frequency power amplifier
  • Multi-frequency output matching network applied to GSM (Global System for Mobile Communications) radio-frequency power amplifier
  • Multi-frequency output matching network applied to GSM (Global System for Mobile Communications) radio-frequency power amplifier

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Embodiment Construction

[0033] The power amplification of the GSM signal adopts the GMSK (Gaussian Filtered Minimum Shift Keying, Gaussian Filtered Minimum Shift Keying) modulation method. This modulation method requires that the input signal of the RF power amplifier has a constant envelope (constant envelope), does not contain amplitude changes, and only has phase changes. Then the output power can be controlled by the RAMP signal. GMSK modulation has very low requirements on the linearity of RF power amplifiers, allowing the use of nonlinear power amplifiers, but has higher requirements in terms of efficiency and harmonic suppression.

[0034] Just because of the specific requirement that the GSM radio frequency power amplifier works in a saturated state (that is, the input signal power continues to increase, and the output power remains unchanged and will not increase), this application provides a multi-frequency output power amplifier applied to the GSM radio frequency power amplifier. matching...

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Abstract

The invention discloses a multi-frequency output matching network applied to a GSM (Global System for Mobile Communications) radio-frequency power amplifier. The multi-frequency output matching network comprises a transformer; a winding having a center tap is adopted by a primary coil of the transformer; the center tap is connected with a working voltage; two ends of the primary coil are taken as a pair of differential input ends of the output matching network, and respectively receive a pair of differential signals output by an amplification circuit; one winding is adopted by a secondary coil of the transformer; one end of the secondary coil outputs a single ended signal, and the other end of the secondary coil is grounded; the primary coil of the transformer is further connected with an LC resonance circuit in parallel; and an output end of the secondary coil of the transformer is further taken as a single ended output end of the output matching network after being connected with an LC low pass filter circuit. The output matching network disclosed by the invention can provide impedance matching within a relatively wide frequency range, and further has excellent harmonic suppression effect.

Description

technical field [0001] The present application relates to an impedance matching circuit in a radio frequency power amplifier, in particular to an impedance matching circuit applied in a radio frequency power amplifier in GSM mode. Background technique [0002] In mobile communication terminals represented by mobile phones, RF power amplifiers are essential. The radio frequency power amplifier is located at the final stage of the transmitter, which is used to amplify the modulated radio frequency signal to the required power value and send it to the antenna for transmission. [0003] When the characteristic size (characteristic length) of a circuit is much smaller than the wavelength of the electromagnetic wave operated by the circuit, the circuit can use a relatively simple lumped element model (lumped element model, also called lumped parameter model, lumped parameter model, lumped component model) to describe. [0004] When the characteristic size of a circuit is in the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/56H03F3/19H03F3/21H03F3/24
CPCH03F1/56H03F3/19H03F3/21H03F3/245Y02D30/70
Inventor 林甲富柯庆福章乐江亮贾斌
Owner RDA MICROELECTRONICS SHANGHAICO LTD
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