Substrate processing apparatus

Abstract

The present disclosure relates to a substrate processing apparatus, and more particularly, a substrate processing apparatus that is capable of improving process uniformity on an entire surface of a substrate. The substrate processing apparatus includes a substrate boat in which a substrate is loaded, a reaction tube in which a processing process for the substrate loaded in the substrate boat is performed, a gas supply unit configured to supply a process gas into the reaction tube through an injection nozzle disposed on one side of the reaction tube, a heating unit including a plurality of vertical heating parts, which are disposed along a circumference of the reaction tube outside the reaction tube and configured to divide the circumference to the reaction tube into a plurality of portions so as to independently heat each of the divided portions of the reaction tube, and a control unit configured to control the heating unit.

Description

technical field [0001] The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of improving process uniformity over the entire surface of a substrate. Background technique [0002] In general, substrate processing apparatuses are classified into single-wafer type processing apparatuses capable of processing one substrate and batch type substrate processing apparatuses capable of simultaneously processing a plurality of substrates. This single wafer type substrate processing apparatus has a simple structure, but has low productivity. Therefore, batch-type substrate processing apparatuses capable of mass-producing substrates are widely used. [0003] The substrate processing apparatus may perform a substrate processing process on one or more substrates at an elevated temperature. In a batch type substrate processing apparatus in which a plurality of substrates are loaded in a plurality of stages, i...

AI Technical Summary

Problems solved by technology

In this method, due to the influence of process gas temperature, the temperature in the injection nozzle zone can be different from the temperature in other zones, causing non-uniformity in the process

When the reaction tube has a uniform temperature throughout its interior region, the partial pressure of the gas in the region of the injection nozzle can be relatively high, resulting in the restriction that a portion of the substrate close to the injection nozzle is exposed to a greater degree than other portions of the substrate. (e.g., a layer grown on a portion of the substrate close to the spray nozzle has a relatively thick thickness)

Images