Unlock instant, AI-driven research and patent intelligence for your innovation.

Method and system for deep ultraviolet mask cleaning using non-thermal solution

A far-ultraviolet and mask technology, applied in the direction of cleaning methods using liquids, cleaning methods and utensils, and originals for photomechanical processing, which can solve problems such as ineffective effects

Active Publication Date: 2021-03-23
TAIWAN SEMICON MFG CO LTD
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, existing methods and systems are ineffective and can introduce additional defects into the photomask

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and system for deep ultraviolet mask cleaning using non-thermal solution
  • Method and system for deep ultraviolet mask cleaning using non-thermal solution
  • Method and system for deep ultraviolet mask cleaning using non-thermal solution

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include embodiments in which the first component and the second component are formed in direct contact, and may also include embodiments in which the first component and the second component may be formed in direct contact. An embodiment in which an additional part is formed so that the first part and the second part may not be in direct contact. In addition, the present invention may repeat reference numerals and / or letters in various instances. This repetition is for the sake of simplicity and clarity and does not in itself indicate a relations...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

An embodiment of the invention provides a method for repairing a mask. The method includes inspecting the mask to identify defects on the mask; subjecting the mask to a cleaning process using a non-thermochemical solution; and repairing the mask to remove defects from the mask. Cooling of non-thermochemical solutions to working temperatures below room temperature by means of cooling modules. Embodiments of the present invention relate to methods and systems for deep ultraviolet mask cleaning using non-thermal solutions.

Description

technical field [0001] Embodiments of the present invention relate to methods and systems for deep ultraviolet mask cleaning using non-thermal solutions. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in IC materials and design have produced generations of ICs, where each generation has smaller and more complex circuits than the previous generation. In the course of IC evolution, functional density (ie, the number of interconnected devices per chip area) has generally increased, while geometry size (ie, the smallest component or line that can be produced using a fabrication process) has decreased. This downscaling process generally offers many benefits by increasing throughput efficiency and reducing associated costs. This scaling process also increases the complexity of handling and manufacturing ICs and, to achieve these advances, similar advances in IC processing and manufacturing are...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/82G03F1/84G03F1/72
CPCG03F1/72G03F1/82G03F1/84B08B3/08B08B3/10B08B7/0035G03F1/22G03F1/86G03F7/2004G03F7/32
Inventor 沈经纬吕启纶林冠文
Owner TAIWAN SEMICON MFG CO LTD