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Preparation method of MWT (Metal Wrap Through) solar cell

A solar cell and one-sided technology, applied in the field of solar cells, can solve problems such as unfavorable large-scale mass production, and achieve the effects of simplified battery preparation process, strong feasibility, and favorable mass production

Active Publication Date: 2011-10-05
JA SOLAR TECH YANGZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

From the perspective of equipment, there are high requirements on the accuracy of optical alignment of laser equipment and the quality of beams, which is not conducive to mass production

Method used

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  • Preparation method of MWT (Metal Wrap Through) solar cell
  • Preparation method of MWT (Metal Wrap Through) solar cell
  • Preparation method of MWT (Metal Wrap Through) solar cell

Examples

Experimental program
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Effect test

Embodiment 1

[0057] The MWT solar cell provided by this embodiment, such as image 3 As shown, it includes a p-type polysilicon substrate 1, and an emitter 2, a passivation anti-reflection layer 3 and an emitter contact grid line 4 are arranged on the front surface (light-receiving surface) of the p-type polysilicon substrate 1 from bottom to top. Between the front surface and the rear surface (back surface) of the silicon substrate, a plurality of conductive through-holes 5 penetrating the substrate are provided, and the plurality of conductive through-holes are filled to connect the emitter electrode and the emitter contact electrode 6 ( That is, the negative pole), the base contact electrode 7 (that is, the positive pole) that forms an ohmic contact with the silicon substrate in the region that is not provided with the emitter contact electrode on the back of the crystalline silicon substrate, the gap between the emitter contact electrode and the base contact electrode provides Insulati...

Embodiment 2

[0078] The preparation method of MWT solar cell in the present embodiment comprises the following steps:

[0079] (1) Texture corrosion

[0080] Texture corrosion is usually: select a p-type single crystal silicon substrate (sheet) with a resistivity of 1.0-3.0 Ω cm, place the silicon sheet at a temperature of 80-95 ° C, and a volume percentage of 1-10% alcohol The surface is corroded in sodium hydroxide solution to form uneven suede. The weight percentage of sodium hydroxide solution is 0.5-1.5%. The textured silicon wafer was soaked in 10% dilute hydrochloric acid for 2 minutes, and then rinsed with deionized water.

[0081] (2) Phosphorus diffusion

[0082] Phosphorus diffusion is usually as follows: using phosphorus oxychloride liquid source, diffusion is carried out in an industrial tubular diffusion furnace, so that the temperature in the constant temperature zone is 800~900°C, the diffusion time is 30~60 minutes, and the diffusion resistance is controlled at 40~80Ω ...

Embodiment 3

[0098] The preparation method of MWT solar cell in the present embodiment comprises the following steps:

[0099] (1) Texture corrosion

[0100] Select a p-type polysilicon substrate (sheet) with a resistivity range of 1.0-3.0 Ω·cm, and place the silicon substrate piece by piece in an acidic texturing solution at a temperature of 8-10°C (by HF, HNO 3 , H 2 O composition) solution for one-sided corrosion of the front surface to form a rough suede surface and then rinsed with deionized water.

[0101] (2) Phosphorus diffusion

[0102] The liquid source of phosphorus oxychloride is used to diffuse in an industrial tubular diffusion furnace, so that the temperature in the constant temperature zone is 800-900°C, the diffusion time is 30-90 minutes, and the diffusion resistance is controlled at 40-80Ω / □; this implementation In the example, the temperature in the constant temperature zone is 850°C, the diffusion time is 70 minutes, and the diffusion square resistance is controlled...

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Abstract

The invention discloses a preparation method of an MWT (Metal Wrap Through) solar cell, comprising the following steps of: (1) carrying out phosphorous diffusion by using a p-type crystal silicon substrate; (2) etching one surface of the crystal silicon substrate by using a chemical solution to remove a phosphorous diffused layer so as to form a polished surface; (3) depositing a passivated antireflective film on the other surface of the crystal silicon substrate to form a light receiving surface; (4) forming a conductive through hole on the crystal silicon substrate by using laser lights; (5) filling a conductive silver paste into the conductive through hole by using a wire mesh on the polished surface so as to form an emitter contact electrode; (6) printing an aluminum paste on the polished surface by using a wire mesh so as to form a base contact electrode; (7) printing a silver contact grid line on the light receiving surface and connecting the silver contact grid line with the conductive through hole; and (8) forming the ohmic contact between a metal and the silicon substrate through sintering so as to finish the solar cell making process. The preparation method of the MWT (Metal Wrap Through) solar cell, disclosed by the invention, has the advantages of simple process flow and easiness in operation, is completely compatible with a solar cell production line widely applied in the current photovoltaic industry and is suitable for mass production.

Description

technical field [0001] The invention belongs to the field of solar cells, and in particular relates to a method for preparing a MWT solar cell. Background technique [0002] Photovoltaic technology uses large-area semiconductor devices to convert the sun's radiant energy into electrical energy. Therefore, this semiconductor device that converts solar energy into electrical energy is called a solar cell, and what plays a key role is the p-n junction structure in the cell. Semiconductor materials have a certain band gap. When the solar cell is irradiated by the sun, photons with energy exceeding the band gap generate electron-hole pairs in the solar cell, and the p-n junction separates the electron-hole pairs. The asymmetry of the p-n junction It determines the flow direction of different types of photo-generated carriers, and can output power through external circuit connections. This is similar to the principle of ordinary electrochemical cells. Taking the p-type silicon ...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02E10/50H01L31/02245
Inventor 周艳芳朱升宾于海斌曹兵张红玲班文政吴兰峰朴松源单伟
Owner JA SOLAR TECH YANGZHOU
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