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Plasma chemical vapor deposition device

A technology of chemical vapor phase growth and plasma, which is applied in the field of plasma chemical vapor phase growth devices, and can solve problems such as easy deformation of the adhesion inhibiting sheet 100

Inactive Publication Date: 2017-08-15
TOYOTA JIDOSHA KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the adhesion inhibiting sheet 100 is easily deformed by the force applied to the adhesion inhibiting sheet 100 from the attached matter 200 deposited on the adhesion inhibiting sheet 100

Method used

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  • Plasma chemical vapor deposition device
  • Plasma chemical vapor deposition device
  • Plasma chemical vapor deposition device

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Embodiment Construction

[0033] Below, according to Figure 1 to Figure 6 One embodiment of a plasma chemical vapor phase growth apparatus will be described. like figure 1 As shown, the plasma chemical vapor phase growth apparatus 11 of the present embodiment includes a reaction furnace 12 in which a workpiece W made of a conductive material such as metal is installed. A hydrocarbon gas as an example of a process gas and an inert rare gas such as argon are supplied to the vicinity of the installation position PA of the workpiece W in the reaction furnace 12 . In addition, in this specification, the plasma chemical vapor phase growth apparatus 11 is also called "PCVD apparatus 11."

[0034] In addition, the PCVD apparatus 11 is provided with a long first conductor 20 and a cylindrical second conductor 30 located outside the first conductor 20 and arranged coaxially with the first conductor 20 . A space is formed between the inner surface 30a of the second conductor 30 and the side surface 20a of th...

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Abstract

A plasma chemical vapor deposition device includes an adhesion suppressing sheet suppressing a processing gas from adhering to an inner wall of a reactor. The adhesion suppressing sheet is arranged between a placement position of a workpiece and the inner wall of the reactor. The adhesion suppressing sheet is a fabric that includes first fiber bundles and second fiber bundles that extend in directions different from each other. In the first fiber bundles, front side portions and rear side portions are alternately arranged in a first direction. In the second fiber bundles, front side portions and rear side portions are alternately arranged in a second direction.

Description

technical field [0001] The invention relates to a plasma chemical vapor growth device. Background technique [0002] In a plasma chemical vapor deposition apparatus (hereinafter also referred to as “PCVD apparatus”), a process gas is plasma-formed and decomposed near a workpiece installed in a reaction furnace to form a film on the workpiece. When the film is formed on the workpiece in this way, a part of the process gas that has not adhered to the workpiece among the process gas decomposed by plasmaization adheres to the inner wall of the reaction furnace. When deposits by the process gas accumulate on the inner wall of the reaction furnace in this way, a force intended to deform the inner wall is applied from the deposits to the inner wall. However, since the inner wall of the reaction furnace has high rigidity, even if a force is applied from the accumulated deposits, the inner wall will not be deformed. Therefore, internal stress, which is a force accumulated inside th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/513
CPCC23C16/4401C23C16/513H01J37/32477H01J37/32486H01J37/32853H01J37/32201H01J2237/3321
Inventor 佐藤羊治佐藤贵康橘和孝中田博道
Owner TOYOTA JIDOSHA KK