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Memory device programming method for correcting programming voltage

A technology of programming voltage and memory, applied in static memory, read-only memory, information storage, etc., can solve problems such as reduced threshold voltage distribution margin and errors

Active Publication Date: 2020-10-27
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when the ISPP method is used in a case where the threshold voltage distribution of memory cells is heterogeneous, the threshold voltage distribution margin may decrease, and thus an error may occur

Method used

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  • Memory device programming method for correcting programming voltage
  • Memory device programming method for correcting programming voltage
  • Memory device programming method for correcting programming voltage

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Embodiment Construction

[0030] Hereinafter, the inventive concept will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the inventive concept are shown. Like reference numerals in the drawings indicate like elements, and description of overlapping features will not be repeated. These inventive concepts may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the inventive concept to those skilled in the art. It should be understood that the exemplary embodiments of the inventive concept are intended to cover all modifications, equivalents and substitutions falling within the spirit and scope of the inventive concept. In the drawings, the size of structures may be exaggerated for clarity. As used herein, the term "and / or" includes any and all combinations of one or ...

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Abstract

A method of programming a flash memory device that is a nonvolatile memory device including a plurality of pages, comprising: performing an Nth programming loop of a programming operation by applying an Nth selected programming voltage to the plurality of pages selected word line in a page, and perform a program verification operation by applying a program verification voltage to the selected word line; memory cells whose threshold voltage is greater than or equal to the program verification voltage among the memory cells connected to the selected word line counting the number of Nth programming loops; generating a programming voltage correction value based on the counted result and the operating condition of the Nth programming loop; and adding the programming voltage correction value to an Mth preset programming voltage of an Mth programming loop performed after the Nth programming loop , where M>N.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of Korean Patent Application No. 10-2016-0005318 filed in the Korean Intellectual Property Office on Jan. 15, 2016, the disclosure of which is incorporated herein by reference in its entirety. technical field [0003] The inventive concepts relate to flash memory devices, and more particularly, to flash memory devices modifying programming voltages, three-dimensional (3D) memory devices, memory systems, and methods of programming memory devices. Background technique [0004] Recently, there has been an increasing demand for nonvolatile memory devices that can be programmed and erased electrically and do not need to be refreshed by periodically rewriting data. As a method of programming a nonvolatile memory device, an incremental step pulse programming (ISPP) method is widely used. According to the ISPP method, a program operation is performed by continuously increasing a program sta...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/34
CPCG11C16/3404G11C16/3427G11C16/0483G11C16/10G11C16/3459G11C16/3495
Inventor 朱相炫任载禹
Owner SAMSUNG ELECTRONICS CO LTD