A layered ws2 two-dimensional nanomaterial with complex helical structure and its preparation method

A technology of two-dimensional nanomaterials and helical structures, which is applied in the direction of nanotechnology, nanotechnology, and nanotechnology for materials and surface science, can solve the problems of inability to synthesize helical structures with different shapes, and achieve filling effects and process technology simple effect

Active Publication Date: 2019-06-21
HUNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At the same time, it also solves the problem that a large number of helical structures with different shapes cannot be synthesized by a simple method in the prior art

Method used

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  • A layered ws2 two-dimensional nanomaterial with complex helical structure and its preparation method
  • A layered ws2 two-dimensional nanomaterial with complex helical structure and its preparation method
  • A layered ws2 two-dimensional nanomaterial with complex helical structure and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0076] Take SiO 2 The / Si sheet is used as the substrate, cut into 10mm×40mm size, ultrasonically washed in acetone and ethanol solutions for 15min, and taken out and dried in an oven at 60°C. Take a certain amount of WS 2 The powder is placed in a porcelain boat and placed in the center of the heating furnace in the quartz tube. SiO 2 The substrate faces up, and the substrate is placed in the heating furnace at a position 13 cm away from the heating center on the right side. Then, a high-purity Ar inert gas with a flow rate of 120 sccm was introduced to exhaust the air and oxygen in the quartz tube. The heating furnace was heated to 1150°C within 35 minutes (i.e. loaded with WS 2 The heating temperature of the powder porcelain boat is 1150°C), at this time SiO 2 The heating temperature of the substrate is 550-650° C., and the temperature is kept constant for 30 minutes. After the reaction is completed, the heating furnace is naturally cooled to room temperature. Take th...

Embodiment 2

[0078] Take SiO 2 The / Si sheet is used as the substrate, cut into 10mm×40mm size, ultrasonically washed in acetone and ethanol solutions for 15min, and taken out and dried in an oven at 60°C. Take a certain amount of WS 2 The powder is placed in a porcelain boat and placed in the center of the heating furnace in the quartz tube. SiO 2 The substrate faces up, and the substrate is placed in the heating furnace at a position 13 cm away from the heating center on the right side. Then pass high-purity Ar inert gas with a flow rate of 20 sccm to exhaust the air and oxygen in the quartz tube. The heating furnace was heated to 1150°C within 35 minutes (i.e. loaded with WS 2 The heating temperature of the powder porcelain boat is 1150°C), at this time SiO 2 The heating temperature of the substrate is 550-650° C., and the temperature is kept constant for 30 minutes. After the reaction is completed, the heating furnace is naturally cooled to room temperature. Take the SiO near the...

Embodiment 3

[0080] Take SiO 2 The / Si sheet is used as the substrate, cut into 10mm×40mm size, ultrasonically washed in acetone and ethanol solutions for 15min, and taken out and dried in an oven at 60°C. Take a certain amount of WS 2 The powder is placed in a porcelain boat and placed in the center of the heating furnace in the quartz tube. SiO 2 The substrate faces up, and the substrate is placed in the heating furnace at a position 13 cm away from the heating center on the right side. Then pass high-purity Ar inert gas with a flow rate of 60 sccm to exhaust the air and oxygen in the quartz tube. The furnace was heated to 1050°C within 35 minutes (i.e. loaded with WS 2 The heating temperature of the powder porcelain boat is 1050°C), at this time the SiO 2 The heating temperature of the substrate is 550-650° C., and the temperature is kept constant for 30 minutes. After the reaction is completed, the heating furnace is naturally cooled to room temperature. Take the SiO near the low...

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Abstract

The invention relates to a layered WS2 two-dimensional nanomaterial with a complex helical structure and a preparation method thereof, belonging to the technical field of photoelectric material design and preparation. The layered WS2 two-dimensional nanomaterial with a complex helical structure has a helical structure with a number greater than or equal to 2, and there is a screw dislocation angle, and the helical structure is selected from a double helix structure, a triple double helix structure, and an N helix structure At least one of; said N is a positive integer greater than 3. The present invention synthesizes layered helical WS2 two-dimensional nanomaterials with uniform components but variable structures by a simple method for the first time. The obtained product has high crystallization quality, diversified structure and wide application field.

Description

technical field [0001] The present invention relates to a layered WS with complex helical structure 2 A two-dimensional nanometer material and a preparation method thereof belong to the technical field of photoelectric material design and preparation. [0002] technical background [0003] Chalcogenide transition metal compounds, such as MoS 2 、MoSe 2 、WS 2 and WSe 2 , as a new two-dimensional layered material has attracted extensive attention due to its atomically ultrathin layered structure, unique optoelectronic properties, and potential applications in integrated nanosystems. Unlike graphene materials, which have no band gap, these atomically ultrathin two-dimensional layered materials have a direct band gap and can emit fluorescence under room temperature laser excitation, making them extremely important in electronics and optoelectronics. [0004] Nanoscale semiconductors with different band gaps have been widely used in the design of bulk semiconductor band gaps. ...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): C30B29/60C30B29/46C30B23/00B82Y30/00B82Y40/00
CPCC30B23/00C30B29/46B82Y30/00B82Y40/00C30B29/66
Inventor潘安练樊晓鹏朱小莉
OwnerHUNAN UNIV