Light emitting device with trench under top contact
A contact and groove technology, applied in the field of vertical thin-film light-emitting devices, can solve problems such as reducing optical extraction of devices
Active Publication Date: 2021-06-29
LUMILEDS HLDG BV
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- Summary
- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
One disadvantage of the vertical architecture is that, given the electrode configuration, current tends to flow directly under the top contact and preferentially generate light in the active region directly below the top contact.
Light generated directly below the top contact is likely to be absorbed by the top contact, which can reduce optical extraction from the device
Method used
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Embodiment Construction
[0016] In the structure illustrated in FIG. 1 , the trench 44 cuts through the active region 52 of the semiconductor structure. The grooves also create a thermally insulating void space. Placing thermally isolated void spaces in close proximity to areas of high current injection and high temperature may reduce device efficiency, or cause device failure. Ultimately, trenches 44 reduce the thickness of the semiconductor structure, increasing the likelihood that the semiconductor structure can break.
[0017] Embodiments of the present invention are directed to structures in vertical light emitting devices that prevent light from being generated under absorbing structures such as top n-contacts, and / or guide light away from absorbing structures, without suffering from the Figure 1 structure described above Shortcomings.
[0018] Depending on the context, as used herein, "AlGaInP" or "AlInGaP" may refer specifically to a quaternary alloy of aluminum, indium, gallium, and phospho...
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Abstract
Embodiments of the invention are directed to structures in vertical light emitting devices that prevent light from being generated under and / or guide light away from the absorbing structure. Embodiments of the invention include a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A bottom contact is disposed on the bottom surface of the semiconductor structure. The bottom contact is electrically connected to one of the n-type region and the p-type region. A top contact is disposed on the top surface of the semiconductor structure. The top contact is electrically connected to the other of the n-type region and the p-type region. The top contact includes a first side and a second side opposite the first side. A first trench is formed in the semiconductor structure below the first side of the top contact. A second trench is formed in the semiconductor structure below the second side of the top contact.
Description
technical field [0001] The present invention relates to a vertical thin film light emitting device having trenches placed to guide light away from a top contact. Background technique [0002] Light emitting diodes (LEDs) are widely accepted as light sources in many applications requiring low power consumption, small size and high reliability. Energy efficient diodes that emit light in the yellow-green to red region of the visible spectrum typically contain active layers formed from III phosphide alloys. [0003] Figure 1 illustrates a portion of a vertical thin-film III-phosphide device described in more detail in US 2011 / 0266568, incorporated herein by reference. In vertical devices, contacts are formed on the top and bottom surfaces of the semiconductor structure. Current is injected through the contacts and travels in a vertical direction. One disadvantage of the vertical architecture is that, given the electrode configuration, current tends to flow directly under the ...
Claims
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IPC IPC(8): H01L33/10H01L33/20
CPCH01L33/10H01L33/20H01L33/0093H01L33/32H01L33/58H01L33/62H01L33/06H01L33/405H01L33/46
Inventor B.哈拉斯
Owner LUMILEDS HLDG BV