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Substrate processing apparatus, gas supply method, substrate processing method, and film forming method

A substrate processing device and gas supply technology, which can be used in electrical components, gaseous chemical plating, semiconductor/solid-state device manufacturing, etc., and can solve problems such as

Active Publication Date: 2020-12-15
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, the valve for adjusting the flow rate installed on the downstream side of the tank in the supply path of the raw material gas is a valve that can adjust the set flow rate, and it only performs opening and closing operations during operation, and is not a valve that can control the opening degree in real time.

Method used

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  • Substrate processing apparatus, gas supply method, substrate processing method, and film forming method
  • Substrate processing apparatus, gas supply method, substrate processing method, and film forming method
  • Substrate processing apparatus, gas supply method, substrate processing method, and film forming method

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Embodiment Construction

[0035] Hereinafter, modes for implementing the present invention will be described with reference to the drawings. In the following detailed description, many specific detailed descriptions are given so that this disclosure may be fully understood. However, it is apparent that one skilled in the art can obtain the present disclosure without such detailed description. In other instances, well-known methods, procedures, systems, and structural elements have not been shown in detail to avoid obscuring the various embodiments.

[0036] figure 1 It is a figure which shows an example of the substrate processing apparatus concerning embodiment of this invention. Such as figure 1 As shown, the substrate processing apparatus of this embodiment has a processing container 10, gas supply pipes 20, 21, a control valve 30, a gas storage tank 40, a mass flow controller (MFC: Mass Flow Controller) 50, a gas supply source 60, a cutoff Valves 70 , 71 , pressure sensors 80 , 81 , exhaust p...

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Abstract

The present invention provides a substrate processing device, a gas supply method, a substrate processing method and a film forming method. The substrate processing device includes: a processing container capable of accommodating a substrate; a pressure detection unit that measures the pressure in the processing container; an exhaust side valve provided in an exhaust pipe for exhausting the interior of the processing container; and a gas storage a tank connected to the processing container via a gas supply pipe; a gas amount measurement unit that measures the gas amount stored in the gas storage tank; and a control valve provided in the first gas supply pipe based on the The pressure in the processing container detected by the pressure detection unit changes the opening of the valve to control the flow path area of ​​the gas supplied from the gas storage tank to the processing container, thereby controlling the pressure in the processing container. pressure.

Description

[0001] This disclosure is based on the priority of Japanese Patent Application No. 2016-063723 filed on March 28, 2016, and the entire contents of the Japanese application are hereby incorporated by reference. technical field [0002] The present invention relates to a substrate processing device, a gas supply method, a substrate processing method and a film forming method. Background technique [0003] Conventionally, there has been known a fluid control system including a vacuum chamber, a gas supply source for supplying gas to the vacuum chamber, a gas supply pipe for connecting the vacuum chamber and the gas supply source, and a vacuum chamber for detecting vacuum. A pressure sensor for the pressure value in the chamber, a pressure controller that receives the output of the pressure sensor and controls a proportional valve installed on the gas supply piping, a flow meter installed on the gas supply piping, and receives the output of the flow meter to control A flow contr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/455
CPCC23C16/45544C23C16/45561C23C16/45546C23C16/45557H01L21/67242G05D7/00
Inventor 菊池一行冈部庸之福岛讲平
Owner TOKYO ELECTRON LTD