A new silicon controlled rectifier type esd protection structure and its realization method
An ESD protection, silicon-controlled rectifier technology, applied in semiconductor devices, electrical solid-state devices, electrical components, etc., can solve the problem of increasing the layout area of the silicon-controlled rectifier type ESD protection structure, and achieve the effect of increasing the maintenance voltage
Active Publication Date: 2019-10-25
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
But these two methods, especially the method of connecting external diodes, will greatly increase the layout area of the silicon controlled rectifier type ESD protection structure (Layout Area)
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0036] The implementation of the present invention is described below through specific examples and in conjunction with the accompanying drawings, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific examples, and various modifications and changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.
[0037] Figure 5 It is a circuit structure diagram of a preferred embodiment of a novel silicon controlled rectifier type ESD protection structure of the present invention. Such as Figure 5 As shown, a novel silicon-controlled rectifier type ESD protection structure of the present invention includes a plurality of shallow trench isolation layers (STI, Shallow Trench Isolation) 10, a first...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a novel silicon controlled rectifier type electro-static discharge (ESD) protection structure and an implementation method thereof. The structure comprises a semiconductor substrate (80), an N well (60), a P well (70), a high-concentration P-type doping layer (20) and a high-concentration N-type doping layer (28), wherein the N well (60) and the P well (70) are grown on thesemiconductor substrate, the high-concentration P-type doping layer (20) and the high-concentration N-type doping layer (28) are arranged on the N well (60), the high-concentration P-type doping layer (20), the N well (60) and the P well (70) form an equivalent PNP triode structure, the high-concentration N-type doping layer (28) is connected in a floating way, a high-concentration N-type dopinglayer (24) and a high-concentration P-type doping layer (26) are arranged on the P well (70), the N well (60), a matrix (80) and the high-concentration N-type doping layer (24) form an equivalent NPNtriode structure, a high-concentration N-type doping layer (22) is arranged above a boundary of the N well (60) and the P well (70), and an N-type grid (50) is placed at a position above a part between the high-concentration N-type doping layer (22) and the high-concentration N-type doping layer (24).
Description
technical field [0001] The invention relates to the technical field of semiconductor integrated circuits, in particular to a novel silicon-controlled rectifier type ESD protection structure with low trigger voltage and high sustain voltage and its realization method. Background technique [0002] In the field of electrostatic (ESD, Electro-Static Discharge) protection design, Silicon Controlled Rectifier (SCR, Silicon Controlled Rectifier) has been widely valued because of its strong ESD discharge capability and small parasitic capacitance. Serious defects limit its application: the first defect is that the trigger voltage of the hysteresis effect is very high, because its trigger voltage is mainly determined by the high reverse breakdown voltage between the N well and the P well; the second defect is that the hysteresis effect The holding voltage of the hysteresis effect is very low, which can easily lead to latch-up effect. [0003] Aiming at the defect of high trigger ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02
Inventor 朱天志
Owner SHANGHAI HUALI MICROELECTRONICS CORP