Semiconductor structure manufacturing method and semiconductor structure

Abstract

The invention provides a semiconductor structure manufacturing method and a semiconductor structure. The semiconductor structure manufacturing method comprises steps: 1) a conductor substrate is provided, wherein the conductor substrate comprises a device unit area and a peripheral unit area located on the periphery of the device unit area; 2) a blocking layer is formed on the upper surface of thedevice unit area; and 3) under the protection effects of the blocking layer, the structure obtained in the step 2) is subjected to semiconductor oxidation treatment, and thus, a gate oxide layer is formed on the upper surface of the peripheral unit area. Before gate oxidation is carried out on the upper surface of the peripheral unit area, the blocking layer is firstly formed on the upper surfaceof the device unit area, an active region of the device unit area can be prevented from being oxidized during the gate oxidation process, the area of the active region of the device unit area can beensured not to be reduced, larger process tolerance space can thus be provided for subsequent process production, bad phenomena such as a broken circuit of the device can be greatly reduced, the performance of the device is thus enhanced, the production yield is finally helped to be improved, and the production cost is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for preparing a semiconductor structure and the semiconductor structure. Background technique [0002] With the rapid development of electronic technology, semiconductor integration is getting higher and higher, more and more functional modules are integrated in the unit area of ​​semiconductor devices, and some auxiliary functional modules are set in the peripheral unit area. For example, in a DRAM memory device, the device cell area usually includes multiple memory cells in a matrix, while the peripheral cell area includes circuits for operating memory cells; in other device structures, in order to ensure that the device cell area can achieve high shock To ensure the breakdown voltage and stability, the transition and protection of the device unit area are realized through the circuit in the peripheral area. Of course, the peripheral unit area may also conta...

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Problems solved by technology

[0004] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a method for preparing a semiconductor structure and a semiconductor structure, which are used to solve the problem of the active area of ​​the device unit region in the prior art when performing a gate thermal oxidation process. Oxidation reduces the actual active area of ​​the device unit area, leading to problems such as device performance degradation, production yield decline, and subsequent process difficulty.

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