Modeling method for mismatch model with temperature effect model
A mismatch model and temperature effect technology, applied in special data processing applications, instruments, electrical digital data processing, etc., can solve the problem that the temperature characteristics of the mismatch model are not described by the corresponding model formula, and achieve the effect of accurate reflection
Inactive Publication Date: 2018-06-12
SHANGHAI HUALI MICROELECTRONICS CORP
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[0005] However, in the existing SPICE modeling technology, the industry only makes a model at room temperature for the mismatch model in the statistical model
In addition, in the current BSIM model commonly used in the industry, there is no corresponding model formula to describe the temperature characteristics of the mismatch model
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[0027] In order to illustrate the technical content, structural features, achieved goals and effects of the present invention in detail, the following will be described in detail in conjunction with the embodiments and accompanying drawings.
[0028] With the continuous advancement of semiconductor technology, the manufacturing process of CMOS process devices has developed to deep sub-micron, the size of components has been continuously reduced, the complexity of integrated circuit structure and layout has continued to increase, and the mismatch between devices has become more and more Seriously, it will affect the performance of the RF / analog integrated circuit to a certain extent, and even cause the circuit to not work normally.
[0029] The mismatch in the characteristics of two adjacent devices is mainly due to random and uncontrollable variations in the process of manufacturing. Moreover, the device is different in terms of its carrier characteristics at different tempera...
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The invention discloses a modeling method for a mismatch model with a temperature effect model. The modeling method for the mismatch model with the temperature effect model includes the steps that S1,a device structure of the mismatch model is designed; S2, mismatch model data associated with device sizes and working temperature is measured; S3, a temperature effect model is added into an original mismatch model, so that the simulated temperature effect of the mismatch model with the temperature effect model and the temperature effect of test data are fit and consistent. According to the modeling method, the temperature effect model is added into the original mismatch model, so that the simulated temperature effect of the mismatch model with the temperature effect model and the temperature effect of test data are fit and consistent, and thus the temperature effect of the device mismatch can be accurately reflected.
Description
technical field [0001] The invention relates to the technical field of mismatch models of integrated circuit devices, in particular to a modeling method of a mismatch model with a temperature effect model. Background technique [0002] With the continuous advancement of semiconductor technology, the manufacturing process of CMOS process devices has developed to deep sub-micron, the size of components has been continuously reduced, the complexity of integrated circuit structure and layout has continued to increase, and the mismatch between devices has become more and more Seriously, it will affect the performance of the RF / analog integrated circuit to a certain extent, and even cause the circuit to not work normally. [0003] The mismatch in the characteristics of two adjacent devices is mainly due to random and uncontrollable variations in the process of manufacturing. Moreover, the device is different in terms of its carrier characteristics at different temperatures and ex...
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IPC IPC(8): G06F17/50
CPCG06F30/367
Inventor 吕少力
Owner SHANGHAI HUALI MICROELECTRONICS CORP