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Dynamic management method for NAND flash

A technology of dynamic management and flash memory, which is applied in the direction of memory system, electrical digital data processing, memory address/allocation/relocation, etc., and can solve the problem of large drop in writing data speed

Inactive Publication Date: 2018-07-17
GOKE US RES LAB
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During the process of moving large files or executing benchmark tools, the speed of writing data often drops significantly

Method used

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  • Dynamic management method for NAND flash
  • Dynamic management method for NAND flash
  • Dynamic management method for NAND flash

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0014] The preferred embodiment of the dynamic management method for flash memory of the present invention will be further described below with reference to the relevant drawings. In order to facilitate the understanding of the present invention, the same components are marked with the same symbols below.

[0015] Such as figure 1 As shown, one host 10 is connected to one solid state disk 12 . The solid state drive 12 has a NAND flash memory 14 . NAND flash memory 14 is planned as two flash memories, one is SLC cache memory 16 and the other is TLC flash memory 18 . According to the present invention, the storage space of the SLC cache 16 and the storage space of the TLC flash memory 18 are dynamically adjusted. Therefore, the size of the storage space of the dynamically adjusted SLC cache 16 and the size of the storage space of the TLC flash memory 18 are variable.

[0016] Such as figure 2 As shown, at S10, the host 10 issues a write command and transmits data.

[0017...

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Abstract

The invention discloses a dynamic management method for an NAND flash. The method comprises the steps of firstly receiving a writing instruction from a host; secondly, judging whether the life of theNAND flash exceeds an initial stage of the life or not; if the life of the NAND flash does not exceed the initial stage of the life, taking a first part of the NAND flash as an SLC cache; if the lifeof the NAND flash exceeds the initial stage of the life, taking a second part of the NAND flash as the SLC cache, wherein the second part is smaller than the first part; and writing data in the SLC cache according to the writing instruction.

Description

technical field [0001] The present invention relates to the dynamic management of flash memory, especially the cache memory of flash memory. Background technique [0002] Flash memory can be divided into SLC (single-level chip) flash memory and MLC (multiple-level chip) flash memory. MLC flash is usually TLC (triple-level chip) flash. The speed of writing data into SLC flash memory is faster than that of writing data into TLC flash memory, because data can be written into SLC flash memory in burst write mode. Therefore, SLC flash memory can be used as a cache. However, SLC cache stores data less densely than TLC flash memory. Therefore, NAND flash memory is usually divided into two areas, namely SLC and TLC, in order to balance the writing speed and storage density. [0003] figure 1 As shown, one host 10 uses one solid state disk 32 . The solid state drive 32 has a NAND flash memory 34 . NAND flash memory 34 is planned as two flash memories, one is SLC cache memory 3...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/0879G06F12/02
CPCG06F12/0246G06F12/0879
Inventor 徐家俊徐伯贤张柏坚
Owner GOKE US RES LAB