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Method for forming pattern of semiconductor element

A semiconductor and pattern technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems affecting product yield and other issues

Inactive Publication Date: 2018-10-09
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Poorly recognizable logo patterns in the manufacturing process may affect product yield

Method used

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  • Method for forming pattern of semiconductor element
  • Method for forming pattern of semiconductor element
  • Method for forming pattern of semiconductor element

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Experimental program
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Embodiment Construction

[0046] In the following disclosure, a method for forming a pattern proposed by an embodiment will be described in detail with reference to the accompanying drawings, especially a method for forming a pattern of a semiconductor element that can generate an easily identifiable pattern. The forming method of the embodiment can be applied to many different types of semiconductor elements, such as (but not limited to) fin field effect transistor manufacturing process or pattern recognition in other manufacturing processes, making the pattern of the predetermined area such as the peripheral area or cutting The alignment marks associated with the scribeline region can become more pronounced after formation, for example, the width of the alignment marks increases, so that the optical sensor can detect the alignment marks more easily. Therefore, by applying the method of the embodiment of the present invention, good critical dimension (CD) control can be obtained, thereby improving the ...

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Abstract

The invention discloses a method for forming a pattern of a semiconductor element, which comprises the steps of providing a substrate material layer with a first region and a second region; setting aplurality of first core shafts on the substrate material layer in a mode of corresponding to the first region; setting a plurality of second core shafts on the substrate material layer in a mode of corresponding to the second region; forming a first side wall spacer on the side wall of each first core shaft, and forming a second side wall spacer on the side wall of each second core shaft, whereinthe first side wall spacers form a first pattern, the second side wall spacers form a second pattern, and the second side wall spacers between two adjacent second core shafts are mutually fused; and transferring the first pattern including the first side wall spacers and the second pattern including the second side wall spacers to the substrate material layer so as to form a patterned substrate material layer.

Description

technical field [0001] The invention relates to a method for forming a pattern, and in particular to a method for forming a pattern of a semiconductor element capable of producing an easily recognizable pattern. Background technique [0002] In recent years, semiconductor devices have been increasingly reduced in size. For semiconductor technology, continuously reducing the size of semiconductor structures, improving speed, increasing performance, increasing density and reducing the cost per unit integrated circuit have become important development goals of semiconductor technology. As the size of semiconductor devices shrinks, the electronic characteristics of the devices must also be maintained or even improved, so as to meet the requirements of the applied electronic products in the market. For example, if the layer structure and components of the semiconductor device are defective or damaged, it will have a non-negligible impact on the electronic characteristics of the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/544H01L21/336H01L29/78
CPCH01L22/30H01L29/66795H01L29/785
Inventor 刘恩铨童宇诚
Owner UNITED MICROELECTRONICS CORP