Preparation method of high-precision photoresist

A photoresist and high-precision technology, applied in the field of photolithography, can solve the problems of slow curing speed of photoresist, insufficient resolution of photolithography, and low integration of integrated circuits, so as to improve curing efficiency, broad application prospects, The effect of high water affinity
CN108803239AInactive Publication Date: 2018-11-13FOSHAN GAOMING DISTRICT ZHUAHE NEW MATERIAL TECH CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
FOSHAN GAOMING DISTRICT ZHUAHE NEW MATERIAL TECH CO LTD
Publication Date
2018-11-13
Estimated Expiration
Not applicable · inactive patent
Patent Text Reader

Abstract

The invention discloses a preparation method of high-precision photoresist and belongs to the technical field of photoetching. When carbon dioxide is used for carrying out carbonation decomposition ona sodium aluminate solution to prepare aluminum hydroxide powder, the causticity ratio of the sodium aluminate solution is reduced and the decomposition of an aluminum hydroxide crystal seed is inhibited; the granularity of aluminum hydroxide formed at the periphery becomes thin, so that the shrinkage rate is reduced when the photoresist is cured; in a curing process of the photoresist, part of aluminum hydroxide grains in a dispersed glue solution react with sodium silicate to generate nano silicon dioxide; surfaces of resin grains are covered with the nano silicon dioxide grains; modified epoxy acrylic resin utilizes a low-shrinkage additive which takes polystyrene with a similar curing shrinkage rate as a main material; the low-shrinkage additive is a core-shell-structure material andan inner core of the low-shrinkage additive is styrene; in a curing and shrinkage process, the steric hindrance is increased; the wavelength received by epoxy acrylate covered with the aluminum hydroxide grains is shorter, so that the photoetching precision of the photoresist is higher and the photoresist has a wide application prospect.
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Description

technical field

[0001] The invention discloses a preparation method of high-precision photoresist, which belongs to the technical field of photolithography. Background technique

[0002] Photoresist, also known as photoresist, is a light-sensitive mixed liquid composed of three main components: photosensitive resin, sensitizer (see spectral sensitizing dye) and solvent. After the photosensitive resin is exposed to light, the photocuring reaction can quickly occur in the exposed area, so that the physical properties of the material, especially the solubility and affinity, will change significantly. After being treated with an appropriate solvent, the soluble part is dissolved to obtain the desired image.

[0003] The technology of photoresist is complicated and there are many varieties. According to its chemical reaction mechanism and development principle, it can be divided into two types: negative gel and positive gel. It is negative gel that forms insoluble substance af...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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