Integrated Power Switching Devices and Electronics
A technology of power switching devices and power switching tubes, applied in the field of microelectronics, can solve the problems of high cost of conduction voltage, heat generation, complex circuits, etc., and achieve high reliability, low manufacturing cost, complex circuit structure and circuit conduction Effect of Loss Reduction
Active Publication Date: 2022-02-01
GPOWER SEMICON
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Problems solved by technology
[0004] At present, for the serious problems of loss and heat generation of rectifier diodes in high current applications, countermeasures are usually adopted to use multiple rectifier diodes in parallel to reduce the current flowing through each rectifier tube, thereby reducing VF and conduction loss. At the same time Distribute heat generation energy, but using multiple rectifier diodes in parallel to reduce the overall conduction voltage VF and disperse heat dissipation has the problems of high cost, complex circuit and large volume
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[0030] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is only a part of embodiments of the present invention, but not all embodiments. The components of the embodiments of the invention generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations.
[0031] Accordingly, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the a...
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Embodiments of the present invention provide an integrated power switch device and electronic equipment, and the integrated power switch device includes a semiconductor power switch tube, a semiconductor power diode, a high potential pin and a low potential pin. Wherein, the semiconductor power switch tube includes a high potential end, a low potential end and a control end; the semiconductor power diode includes an anode and a cathode; the high potential end of the semiconductor power switch tube is connected to the high potential pin, the The anode of the semiconductor power diode is connected, the low potential end is connected with the cathode of the semiconductor power diode and the low potential pin, and the control end is connected with the high potential end. The invention can control the turn-on and turn-off of the internal semiconductor power switch tube under the condition of not needing an additional control circuit. At the same time, compared with the prior art, the complexity of the circuit structure and the conduction loss of the circuit of the present invention are significantly reduced.
Description
technical field [0001] The invention relates to the technical field of microelectronics, in particular to an integrated power switching device and electronic equipment. Background technique [0002] The switching tube composed of semiconductor power devices is the core of modern power converters. The performance of semiconductor power devices has a crucial impact on the performance of the entire power converter system. Therefore, it is of great significance to improve the performance of semiconductor devices. [0003] Among them, the conduction loss is the main loss source of the semiconductor rectifier diode. Usually, the conduction loss of the rectifier diode can be expressed by the product of the forward conduction voltage VF and the current ID flowing through the rectifier diode. The forward conduction voltage drop VF of the rectifier diode is related to the magnitude of the current ID flowing through the diode. The larger the current ID, the greater the forward conducti...
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IPC IPC(8): H03K17/567
CPCH03K17/567
Inventor 朱永生裴轶
Owner GPOWER SEMICON