A Gaas-based infrared flip-chip LED epitaxial wafer structure and preparation method thereof

An LED epitaxial wafer and flip-chip technology, applied in the field of optoelectronics, can solve the problems of unimproved conventional epitaxial structure, unable to improve the power loss of light-extracting efficiency components, etc., and achieve the effect of improving light-extracting efficiency, reducing defect density, and improving crystal quality

Active Publication Date: 2019-10-25
Shandong Huaguang Optoelectronics Co. Ltd.
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This patent mainly improves the internal quantum efficiency by optimizing the strain compensation quantum well. It does not improve other epitaxial conventional structures, and cannot improve the light extraction efficiency and reduce the power loss of components.

Method used

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  • A Gaas-based infrared flip-chip LED epitaxial wafer structure and preparation method thereof
  • A Gaas-based infrared flip-chip LED epitaxial wafer structure and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] A GaAs-based infrared flip-chip LED epitaxial wafer structure, such as figure 1 As shown, it includes GaAs buffer layer 1, GaAs buffer layer 1 and Ga x In 1-x P corrosion barrier layer 2, Al y GaAs ohmic contact layer 3, N-Al z GaAs roughening layer 4, Al a GaAs lower confinement layer 5, InGaAs / Al b GaAs quantum well light emitting region 6, Al c Confinement layer 7 on GaAs, Al d Ga 1-d InP transition layer 8, P-GaP current spreading layer 9; x is 0.3-0.5, y is 0-0.3, z is 0.1-0.3, a is 0.3-0.5, b is 0.3-0.5, c is 0.3-0.5, d 0.1-0.3; the material of the P-GaP current spreading layer 9 is GaP; Al a GaAs lower confinement layer 5 and Al c The GaAs upper confinement layer 7 is doped with C, and the doping concentration is 4.0-6.0E17 atoms / cm 3 .

[0037] The material of the P-GaP current spreading layer 9 is GaP, which reduces light absorption, improves light extraction efficiency, and reduces the problem of component power loss; Al a GaAs lower confinement la...

Embodiment 2

[0040] A GaAs-based flip-chip LED epitaxial wafer structure according to Embodiment 1, the difference is that x=0.5; x=0.5; y=0.3; z=0.2; a=0.3; b=0.4; c=0.3 ;d=0.2.

[0041] GaAs buffer layer 1 has a thickness of 300nm and a doping concentration of 2-3E18 atoms / cm 3 ; x In 1-x The thickness of the P corrosion barrier layer 2 is 400nm, and the doping concentration is 1E18 atoms / cm 3 ;Al y The thickness of the GaAs ohmic contact layer 3 is 400nm, and the doping concentration is 1E18 atoms / cm 3 ;N-Al z The GaAs roughening layer 4 has a thickness of 4000nm and a doping concentration of 5E17-2E18 atoms / cm 3 ;Al a The thickness of the GaAs lower confinement layer 5 is 1200nm, and the doping concentration is 5.0E17 atoms / cm 3 ;InGaAs / Al b The thickness of GaAs quantum well light-emitting region 6 is 25nm; Al c The thickness of the confinement layer 7 on GaAs is 1200nm, and the doping concentration is 4-6E17 atoms / cm 3 ;Al d Ga 1-d The thickness of the InP transition lay...

Embodiment 3

[0043] The preparation method of the GaAs-based flip-chip infrared LED epitaxial wafer structure described in embodiment 1 or 2 comprises using the MOCVD method to grow an epitaxial layer on a GaAs substrate, and the steps are as follows:

[0044] (1) Keep the temperature in the growth chamber of the MOCVD equipment at 680-720°C, and feed TMGa and AsH 3 , growing a GaAs buffer layer 1 on a GaAs substrate;

[0045] (2) Raise the temperature in the growth chamber of the MOCVD equipment to 730-770°C, and continue to feed TMGa, TMIn and PH 3 , growing Ga on the GaAs buffer layer 1 x In 1-x P corrosion barrier layer 2;

[0046] (3) Reduce the temperature in the growth chamber of the MOCVD equipment to 680-720°C, turn off TMIn and PH 3 , into TMAl, TMGa and AsH 3 , at Ga x In 1-x Growth of Al on P corrosion barrier layer 2 y GaAs ohmic contact layer 3;

[0047] (4) Keep the temperature in the growth chamber of the MOCVD equipment at 680-720°C, and continue to feed TMAl, TMG...

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Abstract

The invention relates to a GaAs-based infrared flip-chip LED epitaxial wafer structure and a preparation method thereof. The GaAs-based infrared flip-chip LED epitaxial wafer structure sequentially comprises a GaAs buffer layer, a Ga<x>In<1-x>P corrosion resisting layer, a Al<y>GaAs ohm contact layer, an N-Al<z>GaAs coarsening layer, an AlGaAs lower limiting layer, a InGaAs / AlGaAs quantum well luminescent area, an Al<c>GaAs upper limiting layer, an Al<d>Ga<1-d>InP transition layer and a P-GaP current expansion layer from bottom to top. A P-type current expanded AlxGaAs material is changed into the current expansion layer of an AlxGa1-xInP material transition and GaP material, light absorption is reduced, the light output efficiency is improved, and the component power loss problem isreduced. The P-type AlGaAs limiting layers adopt C self-doping to replace Mg doping so as to reduce defects and improve the crystallization quality.

Description

technical field [0001] The invention relates to a GaAs-based infrared flip-chip LED epitaxial wafer structure and a preparation method thereof, belonging to the field of optoelectronic technology. Background technique [0002] There are many types of light emitting elements, which can be roughly divided into infrared light emitting elements and visible light light emitting elements according to the spectrum. Generally speaking, the cut-in voltage of gallium arsenide infrared light-emitting diodes is about 1V, while the cut-in voltage of gallium red light-emitting diodes is about 1.8V; the cut-in voltage of green light-emitting diodes is about 2.0V. When the added voltage exceeds the cut-in voltage, the current will rise rapidly, and the ambient temperature has a great influence on the cut-in voltage of the diode. When the temperature is high, the value of the cut-in voltage will increase, otherwise, the cut-in voltage will decrease. When the infrared light-emitting diode wo...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L33/00H01L33/06H01L33/12H01L33/14H01L33/30
CPCH01L33/0062H01L33/06H01L33/12H01L33/14H01L33/30
Inventor王建立肖成峰王成新
OwnerShandong Huaguang Optoelectronics Co. Ltd.