Graphene cladded silylene as well as preparation method and application method thereof

Abstract

The invention provides graphene cladded silylene as well as a preparation method and an application method thereof. The preparation method comprises the following steps: placing a metal catalysis substrate in a reaction cavity; removing a natural oxidization layer on the metal catalysis substrate and exposing a metal layer; selecting a gas-state hydrocarbon type carbon source as a precursor and forming graphene on the metal layer through a chemical vapor deposition method; closing the gas-state hydrocarbon type carbon source of the reaction cavity and introducing a silicon-containing gas source and reductive gas, so as to form silylene on a surface layer of the graphene through evaporated silicon atoms via epitaxial growth; only closing the silicon-containing gas source or closing the silicon-containing gas source and reductive gas at the same time; introducing the gas-state hydrocarbon type carbon source to clad carbon atoms on the surface of the graphene, so as to obtain the graphenecladded silylene. The silylene obtained by the preparation method can keep an original structure in the air for two or more than two years; the method breaks through a traditional method, and preparation conditions are relatively loose and simple.

Description

technical field [0001] The invention relates to the technical field of silicene preparation, in particular to a graphene-coated silicene prepared based on metal catalysis, a preparation method and a use method thereof. Background technique [0002] Sicene is a two-dimensional nanomaterial in which silicon atoms are arranged in a planar honeycomb shape, and has a good two-dimensional crystal structure and electrical properties. Compared with graphene with zero band gap, silicene has a certain forbidden band width, so it has broad application prospects in the field of semiconductor electronic devices and optoelectronic devices. sp of silicene 2 -sp 3 The structural properties of the surface are extremely sensitive, resulting in a very active chemical environment, which makes the preparation of silicene a strong limitation. [0003] The current method for preparing silicene is silicon source evaporation epitaxial growth method. In a high-vacuum environment, silicon wafers a...

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Problems solved by technology

However, when evaporated atoms epitaxially grow silicene on the substrate, due to the strong interfacial interaction, silicene will be restructured, and the degree of warping of the atomic layer will change. Some atoms will rise and some atoms will fall, resulting in The unit cell becomes larger, the symmetry decreases, or a few-layer structure is formed, thereby destroying the Dirac-Fermi characteristics of silicene and affecting the performance of the silicene film layer material. In addition, the silicene obtained through the above substrate Not only is the cost high, but the size is extremely small and cannot be exposed to the air

Some researchers also use alumina coating to protect the silicene synthesized on the silver surface. However, the silicene prepared in this way is very unstable and will be completely oxidized in less than a day.

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