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Magnetron memory element

A magnetic control and voltage control technology, applied in the field of magnetic control memristor, can solve the problem that the circuit components cannot realize the magnetic flux control operation order, etc.

Active Publication Date: 2019-01-25
CHENGDU NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The technical problem to be solved by the present invention is to provide flux-controlled memory-order element (flux-controlled memory-order element), as a new element, to solve the problem that the existing circuit elements cannot realize the magnetic flux control operation order

Method used

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Examples

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Embodiment Construction

[0030] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0031] Such as figure 1 As shown, a magnetic control memristor, including pin a, pin b, voltage-controlled variable-order reactance U F , voltage integrator A, voltage-controlled variable-order partial reactance U F Including the voltage control terminal u c and variable resistance Voltage-controlled variable stage anti-U F internally variable fractional resistance The operation order is controlled by the voltage control terminal u c The voltage value control, the voltage-controlled variable-order partial reactance internal voltage control terminal u c The input impedance of is infinite, the voltage integrator A includes the voltage input terminal u and the voltage output terminal u c , the input impedance ...

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Abstract

The invention discloses a magnetron memory element, comprising pins a and b, a voltage controlled variable step reactance UF and a voltage integrator A. The VCVA UF comprises a voltage control terminal uc and a variable step reactance, the operation order of the variable step reactance in the VCVA UF is controlled by the voltage value of the voltage control terminal uc. A voltage integrator A includes a voltage input terminal u and a voltage output terminal uc, the voltage value at the voltage output terminal is the proportionality coefficient of the voltage integrator A. The magnetron memoryelement has the function of magnetic flux memory, and the magnetic flux changes the operation order of the element, the magnetron memory element can serve as a new circuit element to be widely used inthe design of circuits and systems, and the frequency doubling property is unique to the magnetron memory element.

Description

technical field [0001] The patent of the present invention relates to the basic theory of circuit elements, and specifically relates to the magnetic control memristor. Background technique [0002] Electronic components are the most basic units of circuits and systems. The Leiden bottle invented by P. Musenbrock of Leiden University in the Netherlands in 1745 is the most primitive capacitor (capacitor). In 1826, German Ohm discovered Ohm's law and proposed the concept of resistance (resistor). In 1831, British Faraday made an iron core. The coil makes an inductor. Resistors, capacitors and inductors are three basic passive circuit components recognized around the world and have been most widely used in circuits and systems. [0003] Fractional calculus is a kind of calculus whose operation order is non-integer, and has become an important branch of mathematical analysis. Due to the long-term memory, non-locality and weak singularity of fractional calculus, it has become a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
CPCG06F30/30
Inventor 余波
Owner CHENGDU NORMAL UNIV