Magnetron memory element
A magnetic control and voltage control technology, applied in the field of magnetic control memristor, can solve the problem that the circuit components cannot realize the magnetic flux control operation order, etc.
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[0030] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.
[0031] Such as figure 1 As shown, a magnetic control memristor, including pin a, pin b, voltage-controlled variable-order reactance U F , voltage integrator A, voltage-controlled variable-order partial reactance U F Including the voltage control terminal u c and variable resistance Voltage-controlled variable stage anti-U F internally variable fractional resistance The operation order is controlled by the voltage control terminal u c The voltage value control, the voltage-controlled variable-order partial reactance internal voltage control terminal u c The input impedance of is infinite, the voltage integrator A includes the voltage input terminal u and the voltage output terminal u c , the input impedance ...
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