Gate driving circuit and gate driver

Abstract

The invention provides a gate driving circuit and a gate driver, comprising a signal control module, a processing module, a first adjusting module and a second adjusting module. The signal control module and the processing module are electrically connected, and the processing module is electrically connected with the first adjusting module and the second adjusting module respectively, and the first adjusting module is electrically connected with the second adjusting module; a signal control module, configured to output a control signal to the processing module, the first adjusting module, andthe second adjusting module; the processing module, the first adjusting module and the second adjusting module are configured to control the voltage of the PU signal point of the gate driving circuitto be maintained as a preset voltage according to the control signal, and the PU signal point is a connection point between the processing module and the second adjusting module. The gate driving circuit provided by the invention can maintain the voltage of the PU signal point in the gate driving circuit to be a preset voltage, and solves the problem that the transistor is turned on and the voltage of the PU point is leaked in the gate driving circuit.

Description

technical field [0001] The invention relates to the technical field of liquid crystal displays, in particular to a gate drive circuit and a gate driver. Background technique [0002] Gate Driver On Array, referred to as GOA, is a technology that integrates the gate drive circuit on the thin film transistor array TFT to realize the progressive scanning of the gate signal line (Gate line). GOA technology has the advantages of saving gate IC and realizing narrow borders, etc., and has been widely used in panel design. As the size of the display panel continues to increase, the load resistance and capacitance of the gate scanning line are large, and the delay of the gate signal becomes serious, so the driving capability of the GOA circuit is particularly important. [0003] The GOA circuit in the prior art generally includes a plurality of cascaded GOA units, and each GOA unit can drive a corresponding level of horizontal scanning lines, that is, each GOA unit is responsible fo...

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Problems solved by technology

[0004] In the prior art, even if the initial threshold voltage Vth of the prepared metal oxide TFT device is greater than 0V by optimizing the preparation process of the TFT, the Vth of the TFT is prone to shift after a long time of operation, especially for indium gallium zinc oxide ( IGZO) TFT, when its Vth is less than 0V, because its electrical subthreshold swing (S factor) value is generally relatively small, so when the Vgs of the TFT is 0, the leakage of the TFT will be very serious, which will lead to When the potential of the PD point in the GOA unit is low, the voltage of the PU point in the GOA unit and the output voltage of the scanning line corresponding to the GOA unit will be leaked, which will further cause the output voltage of the GOA unit to be slow and low, and even cause the GOA unit to fail

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