Method for forming fin field effect transistor (finfet) device structure

Abstract

A fin field effect transistor (FinFET) device structure with dummy fin structures and a method for forming the same are provided. The FinFET device structure includes an isolation structure over a substrate and a first fin structure extended above the isolation structure. The FinFET device structure includes a second fin structure embedded in the isolation structure and a liner layer formed on sidewalls of the first fin structures and sidewalls of the second fin structures. The FinFET device structure also includes a material layer formed over the second fin structures, and the material layerand the isolation structure are made of different materials.

Description

technical field [0001] Embodiments of the disclosure relate to a semiconductor structure, and in particular to a fin field effect transistor device structure and a method for forming the same. Background technique [0002] Semiconductor devices are used in various electronic applications such as personal computers, mobile phones, digital cameras, and other electronic equipment. Semiconductor devices are usually manufactured by sequentially depositing an insulating or dielectric layer, a conductive layer, and a semiconductor layer on a semiconductor substrate, and patterning the above material layers using a photolithography process to form circuit components and element. Many integrated circuits are typically fabricated on a single semiconductor wafer, and the individual die are singulated by dicing between the integrated circuits along dicing lines. The above-mentioned dies are usually separately packaged, for example, in a multi-chip module or other types of packages. ...

AI Technical Summary

Problems solved by technology

[0004] While existing FinFET devices and methods of fabrication are generally adequate for the intended purpose, they do not fully meet all needs

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