Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A thin film material for overvoltage protection of input and output pins of integrated circuits and its application method

A thin-film material, overvoltage protection technology, applied in circuits, electrical components, electrical solid-state devices, etc., can solve the problems of expensive products, increasing product size, increasing chip area, etc.

Active Publication Date: 2021-08-20
SHANGHAI YINT ELECTRONICS
View PDF12 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Generally, semiconductor overvoltage protection devices such as pnpn overvoltage protection elements or pn diode elements are installed on the substrate, which greatly increases the size of the product, increases the area of ​​the chip, and makes the product expensive

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A thin film material for overvoltage protection of input and output pins of integrated circuits and its application method
  • A thin film material for overvoltage protection of input and output pins of integrated circuits and its application method
  • A thin film material for overvoltage protection of input and output pins of integrated circuits and its application method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0023] see Figure 1 to Figure 3 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arb...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a thin film material for overvoltage protection of input and output pins of an integrated circuit and a method for using it. The thin film material is a compound composed of five elements: nitrogen, silicon, germanium, arsenic and selenium, and can be made into an alloy target in advance. , prepared by ion vapor deposition, the thickness can be between 10nm and 10um. The atomic ratio of each element is: silicon accounts for 60% to 90%, selenium accounts for 35% to 5%, and the remaining proportion is shared by the other three elements. The method of use is to make the material thin film on the pin area of ​​the integrated circuit in the form of an overvoltage protection band or an overvoltage protection ring, so as to realize a low-cost strong suppression device design for all pins against lightning strikes, anti-static shocks, etc. Program. The invention realizes overvoltage protection by utilizing the threshold conduction characteristic specially used by the compound material, has novel concept, simple structure, and is an overvoltage protection material and device with extremely fast overvoltage protection response speed and strong overvoltage suppression ability.

Description

technical field [0001] The invention relates to the field of overvoltage protection in circuits, in particular to a compound film overvoltage protection material and device used in integrated circuits. Background technique [0002] In today's information age, computer networks and communication equipment are becoming more and more sophisticated, and the requirements for their working environment are also getting higher and higher, and lightning and instantaneous overvoltage of large electrical equipment will be sent and received more and more frequently through power supplies, antennas, and radio signals. Equipment and other lines intrude into indoor electrical equipment and network equipment, causing damage to equipment or components, casualties, interference or loss of transmitted or stored data, and even misoperation or temporary paralysis of electronic equipment, system pause, data transmission interruption, LAN Even the wide area network is damaged. Overvoltage protect...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/482
CPCH01L23/4827
Inventor 陈小刚肖南海
Owner SHANGHAI YINT ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com