Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Wafer cutting method

A cutting method and wafer technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of wafer edge chipping, crystal stress damage, crystal damage, etc., and achieve small cutting stress, fast cutting speed, fast effect

Active Publication Date: 2019-04-02
CHIPMOS TECHSHANGHAI
View PDF3 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, using a mechanical blade to directly act on the wafer surface will cause stress damage to the inside of the crystal, which is prone to wafer edge chipping and crystal damage.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wafer cutting method
  • Wafer cutting method
  • Wafer cutting method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0042] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", " The orientations or positional relationships indicated by "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", and "circumferential" are based on...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a wafer cutting method. The wafer cutting method comprises the following steps of providing a wafer, attaching a grinding adhesive film layer on the front surface of the wafer,grinding the back surface of the wafer attached with the grinding adhesive film layer, attaching an adhesive film layer on the back surface of the grinded wafer, enabling the grinded wafer to be fixed on a wafer frame through the adhesive film layer, removing the grinding adhesive film layer from the front surface of the wafer, adopting laser to carry out first cutting on the back surface of thewafer along a plurality of longitudinal pre-cutting marks and a plurality of transverse pre-cutting marks, adopting a cutting tool for continuously cutting the wafer along the depth directions of a plurality of longitudinal first cutting channels and a plurality of transverse first cutting channels, wherein the width of the longitudinal first cutting channels is larger than the width of the longitudinal second cutting channels, and the width of the transverse first cutting channels is larger than the width of the transverse second cutting channels. The wafer cutting method disclosed in the invention is used in the cutting process of the ultra-thin wafers, so that the cutting process of the ultra-thin wafer is provided, and the cutting yield of the wafer is improved.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular, to a wafer cutting method. Background technique [0002] Integrated circuit chips continue to develop in the direction of high density and thinness. In order to meet the requirements, it is necessary to thin and cut the back of the wafer. Wafer thinning technology is the key technology of stacked chip packaging. As the number of chip stacking layers continues to increase, the thickness of the chip is gradually thinning. [0003] The traditional process of thinning and cutting wafers (60um~100um thickness) is five process steps: front-side filming, back-side grinding, back-side filming, front-side peeling and wafer cutting. The cutting tool used in the wafer cutting process is a blade, but when processing thinner original wafers (less than 60 μm in thickness), because the wafer is thinned, its strength is also weakened, and defects such as fronta...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/268H01L21/304
CPCH01L21/268H01L21/3043
Inventor 沈珏玮李荣罗伟民
Owner CHIPMOS TECHSHANGHAI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products