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Shallow-trench isolation structure and formation method thereof

An isolation structure, shallow trench technology, applied in electrical components, electrical solid state devices, semiconductor/solid state device manufacturing, etc., can solve the problems of increasing image sensor noise, affecting the performance of semiconductor devices, dark current, etc.

Inactive Publication Date: 2019-04-16
HUAIAN IMAGING DEVICE MFGR CORP
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Problems solved by technology

In either case, the shallow trench isolation structure will increase the noise of the image sensor due to the excess charge introduced by the interface defects, thereby affecting the performance of the semiconductor device
[0005] Therefore, it is necessary to avoid the situation that the excess charge introduced by the shallow trench isolation structure enters the photoelectric element area, thereby causing dark current

Method used

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  • Shallow-trench isolation structure and formation method thereof
  • Shallow-trench isolation structure and formation method thereof
  • Shallow-trench isolation structure and formation method thereof

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Embodiment Construction

[0029] Various exemplary embodiments of the present disclosure will now be described in detail with reference to the accompanying drawings. It should be noted that relative arrangements of components and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present disclosure unless specifically stated otherwise.

[0030] The following description of at least one exemplary embodiment is merely illustrative in nature and in no way intended as any limitation of the disclosure, its application or uses.

[0031] Techniques, methods and devices known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, such techniques, methods and devices should be considered a part of this description.

[0032] In all examples shown and discussed herein, any specific values ​​should be construed as illustrative only, and not as limiting. Therefore, other examples of the exemplary embodiment...

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Abstract

The invention relates to a shallow-trench isolation structure and a formation method thereof. In an embodiment, the invention relates to the shallow-trench isolation structure, the shallow-trench isolation structure comprises a shallow trench, an oxide layer and a conductive filling body, wherein the shallow trench is formed in a semiconductor substrate connected with ground, the oxide layer is formed on a side wall and at the bottom of the shallow trench, the conductive filling body is formed on the oxide layer so as to fill the shallow trench, and negative potential is applied to the conductive filling body so that free charges at an interface of the semiconductor substrate and the shallow trench flow to the ground through the semiconductor substrate under driving of the negative potential.

Description

technical field [0001] The present disclosure generally relates to the technical field of semiconductor device manufacturing, and in particular, relates to a shallow trench isolation structure, a semiconductor device and a preparation method thereof. Background technique [0002] With the continuous maturity of integrated circuit technology, the number of active devices integrated on the unit area of ​​the semiconductor substrate is increasing (for example, millions), so the devices are placed more closely in the chip to accommodate the size of the chip. Available space. In order not to affect each other between devices, it is necessary to use isolation technology to isolate each active device from each other. As the density of active devices per unit area of ​​a semiconductor substrate continues to increase, effective isolation between devices becomes more important. [0003] Shallow trench isolation (Shallow Trench Isolation, STI) is a common isolation technology. Shall...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/762H01L27/146H01L27/02
CPCH01L21/76221H01L27/0203H01L27/1463
Inventor 林永璨黄晓橹
Owner HUAIAN IMAGING DEVICE MFGR CORP
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