Unlock instant, AI-driven research and patent intelligence for your innovation.

Three-dimensional memory and its manufacturing method

A manufacturing method and memory technology, applied in the direction of semiconductor devices, electrical solid devices, electrical components, etc., can solve problems such as damage, step shape does not meet design expectations, and achieve the effect of alleviating material damage

Active Publication Date: 2020-08-14
YANGTZE MEMORY TECH CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is found that the shape of the steps in the TSG area, especially the highest part, does not meet the design expectations, but is partially damaged at both ends

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Three-dimensional memory and its manufacturing method
  • Three-dimensional memory and its manufacturing method
  • Three-dimensional memory and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0028] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.

[0029] As indicated in this application and claims, the terms "a", "an", "an" and / or "the" do not refer to the singular and may include the plural unless the context clearly indicates an exception. Generally speaking, the terms "comprising" and "comprising" only suggest the inclusion of clearly identified steps and elements, and these steps and elements do not constitute an exclusive list, and the method or device may also contain other st...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a three-dimensional memory and a manufacturing method thereof. The three-dimensional memory has a core area and a step area, the step area has a top selection area adjacent to the core area, the top selection area has a first step closest to the core area, wherein the first step is at The projection pattern on the extended surface of the three-dimensional memory has a plurality of corners, and at least one of the plurality of corners is a chamfer. The present invention can alleviate the problem of material damage on the corners by chamfering the corners at both ends of the first step in the TSG area closest to the core area.

Description

technical field [0001] The invention mainly relates to a semiconductor manufacturing method, in particular to a three-dimensional memory and a manufacturing method thereof. Background technique [0002] In order to overcome the limitations of two-dimensional memory devices, the industry has developed memory devices with a three-dimensional (3D) structure to increase integration density by three-dimensionally arranging memory cells on a substrate. [0003] In a three-dimensional memory such as 3D NAND flash memory, the memory array may include a core (core) region and a stair step (SC) region. The stepped area has multiple steps, which are used to lead out the contact portions of the control gates in each layer of the memory array. These control gates are used as word lines of the memory array to perform operations such as programming, erasing and writing, and reading. [0004] There is a top selection area (TSG area) for arranging top select gates (Top Select Gate, TSG) at...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11524H01L27/11551H01L27/1157H01L27/11578H10B41/35H10B41/20H10B43/20H10B43/35
Inventor 张中华文宇李艳妮
Owner YANGTZE MEMORY TECH CO LTD