Unlock instant, AI-driven research and patent intelligence for your innovation.

Wafer level packaging for MEMS device

A wafer and device area technology, applied in the field of wafer-level packaging for MEMS devices, which can solve problems such as instability

Active Publication Date: 2019-05-21
VANGUARD INT SEMICON SINGAPORE PTE LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, fabrication of micro-electromechanical system (MEMS) devices involves making release structures that move mechani

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wafer level packaging for MEMS device
  • Wafer level packaging for MEMS device
  • Wafer level packaging for MEMS device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] Embodiments generally relate to microelectromechanical systems (MEMS) devices. Generally, MEMS devices are processed in parallel on wafers such as silicon or silicon-on-insulator (SOI) wafers. Other types of wafers may also be used to form the MEMS devices. After processing, the wafer is diced to separate the devices.

[0013] Figure 1a to Figure 1b Various views of one embodiment of a microelectromechanical system (MEMS) device 100 are shown. Figure 1a shows a cross-sectional view of the device 100 along the x-direction, and Figure 1b A plan view of the device substrate 150 of the display device 100 is shown.

[0014] Please refer to Figure 1a to Figure 1b , the device includes a MEMS device substrate 150 . As shown, the MEMS device substrate includes a plurality of substrates. In one embodiment, the device substrates include a surface substrate 152 and a base or proof mass substrate 154 . A dielectric layer 153 is provided between this surface and the base ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A microelectromechanical system (MEMS) device is disclosed. The MEMS device includes a device substrate with a top device surface and a bottom device surface having a MEMS component in a device region. A top device bond ring is disposed on the top device surface surrounding the device region and a bottom device bond ring is disposed on the bottom device surface surrounding the device region. A topcap with a top cap bond ring is bonded to the top device bond ring by a top eutectic bond and a bottom cap with a bottom cap bond ring is bonded to the bottom device bond ring by a bottom eutectic bond. The eutectic bonds encapsulate the MEMS device.

Description

technical field [0001] The present application relates generally to microelectromechanical systems (MEMS) devices and methods of manufacturing the same. Background technique [0002] Recent innovations in three-dimensional (3D) chip, die, and wafer integration (hereafter collectively referred to as stacked structures) have enabled further miniaturization of devices and technological advances in increased speed and density at reduced power consumption and cost. Wafer packaging technology at the wafer level allows two or more wafers to be stacked vertically and provide electrical connections and a hermetic seal between the wafers. [0003] Various wafer bonding techniques have been developed and employed to bond two or more wafers of the same or different types. However, fabrication of micro-electromechanical system (MEMS) devices involves making release structures that move mechanically, leading to, among other problems, adhesion between surfaces and thermal stress-induced i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B81B7/02B81B7/00B81C1/00
CPCB81C1/00269B81B2201/038B81B7/0054B81C2203/0118B81C2203/035B81B3/0016B81C1/00984B81B2207/09B81C2203/036B81B2203/0127B81C1/00579B81B3/00H01L23/481H01L21/56H01L21/52H01L21/76898H01L23/5226B81B7/0041B81C1/00325H01L23/522B81B7/00B81B7/02B81B7/0051
Inventor S·查克拉瓦蒂P·耶勒汉卡S·P·波伊卡伊尔萨特厄希易俊豪R·库马尔N·拉查塞卡赖
Owner VANGUARD INT SEMICON SINGAPORE PTE LTD